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Volumn 520, Issue 6, 2012, Pages 2158-2161

Front and backside-illuminated GaN/Si based metal-semiconductor-metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies

(9) Müller, Alexandru a Konstantinidis, George b Androulidaki, Maria b Dinescu, Adrian a Stefanescu, Alexandra a Cismaru, Alina a Neculoiu, Dan a Pavelescu, Emil a Stavrinidis, Antonis b

a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES (Romania)

b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

Author keywords

e beam lithography; GaN membrane; Responsivity; UV photodetector

Indexed keywords

BACKSIDE-ILLUMINATED; CCD IMAGING; E-BEAM LITHOGRAPHY; INTERDIGITATED STRUCTURE; METAL SEMICONDUCTOR METAL; MICROMACHINING TECHNIQUES; NANOLITHOGRAPHIC TECHNIQUES; RESPONSIVITY; RESPONSIVITY MEASUREMENTS; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTOR;

COMPOSITE MICROMECHANICS; GALLIUM NITRIDE; MICROMACHINING;

PHOTODETECTORS;

EID: 84855973139 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.09.045 Document Type: Article

Times cited : (21)

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