Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing

Applied Surface Science

Volumn 159, Issue , 2000, Pages 449-455

  Sawada, T ^a   Ito, Y ^a   Imai, K ^a   Suzuki, K ^a   Tomozawa, H ^b   Sakai, S ^c  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b Kyoto Semiconductor Corporation   (Japan)

^c UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; THERMODYNAMIC STABILITY;

SCHOTTKY BARRIER HEIGHT (SBH);

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034207155     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00060-X     Document Type: Article

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