Effects of thermal annealing on the properties of GaN MSM UV photodetectors

Physica B: Condensed Matter

Volumn 404, Issue 2, 2009, Pages 275-277

  Zhao, Man ^a   Bao, Jinhe ^a   Fan, Xiuying ^a   Gu, Feng ^a   Guo, Yongsheng ^a   Zhang, Yong ^a   Zhao, Mei ^a   Sha, Yufang ^a   Guo, Fei ^a   Li, Jian ^b  

^a AVIATION UNIVERSITY OF AIR FORCE   (China)

^b Jilin Institute of Metrology Technology   (China)

Author keywords

GaN; Metal semiconductor metal; Photodetector; Thermal annealing

Indexed keywords

ANNEALING; CORUNDUM; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; METALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

DETECTIVITY; GAN; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METAL-SEMICONDUCTOR-METAL; PHOTODETECTOR; PHYSICAL MECHANISMS; RESPONSIVITY; SAPPHIRE SUBSTRATES; THERMAL ANNEALING; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS;

METAL ANALYSIS;

EID: 59649117757     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.10.048     Document Type: Article

References (18)

1. Razeghi M., and Rogalski A. J. Appl. Phys. 79 (1996) 7433
2. Chiou Y.Z., Su Y.K., Chang S.J., Gong J., Lin Y.C., Liu S.H., and Chang C.S. IEEE J. Quantum Electron. 39 (2003) 681
3. Monory E., Monuz E., Sanchez F.J., Calley F., Calleja E., Beauont B., Gibart P., Munoz J.A., and Cusso F. Semicond. Sci. Technol. 13 (1998) 1042
4. Xu G.Y., Salvador A., Kim W., Fan Z., Lu C., Tang H., Mokoc H., Smith G., Estes M., Goldenberg B., Yang W., and Krishnankutty S. Appl. Phys. Lett. 71 (1997) 2154
5. Mosca M., Reverchon J.L., Granjean N., and Duboz J.Y. IEEE J. Sel. Top. Quantum Electron. 10 (2004) 752
6. Biyikli N., Kimukin I., Aytur O., and Ozbay E. IEEE Photon. Technol. Lett. 16 (2004) 1718
7. Biyikli N., Kimukin I., Tut T., Kartaloglu T., Aytur O., and Ozbay E. Semicond. Sci. Technol. 19 (2004) 1259
8. Prish G., Keller S., Kozodoy P., Ibbetson J.P., Marchand H., Fini P.T., Fleischer S.B., DenBarrs S.P., Mishra U.K., and Tarsa E.J. Appl. Phys. Lett. 75 (1999) 247
9. Osinsky A., Gangopadhyay S., Gaska R., Williams B., Khan M.A., Kuksenkov D., and Temkin H. Appl. Phys. Lett. 71 (2000) 2334
10. Adivarahan V., Simin G., Yang J.W., Lunev A., Khan M.A., Pala N., Shur M., and Gaska R. Appl. Phys. Lett. 77 (2000) 863
11. Chang S.J., Lee M.L., Sheu J.K., Lai W.C., Su Y.K., Chang C.S., Kao C.J., Chi G.C., and Tsai J.M. IEEE Electron Device Lett. 24 (2003) 212
12. Hong W.P., Chang G.K., and Bhat R.H. IEEE Trans. Electron Devices 36 (1989) 659
13. Moons J.H., Li S.S., and Lee J.H. Electron. Lett. 37 (2001) 1249
14. Sawada T., Ito Y., Imai K., Suzuki K., Tomozawa H., and Sakai S. Appl. Surf. Sci. 452 (2000) 159
15. Ubrahim K., Aljubouri A.A., Lee Y.C., Hassan Z., and Hashim M.R. Proc. SPIE Int. Soc. Opt. Eng. 151 (2004) 5353
16. Wang H.T., Jang S., Anderson T., Chen J.J., Kang B.S., Ren F., Voss L.F., Stafford L., Khanna R., Gila B.P., Pearton S.J., Shen H., LaRoche J.R., and Smith K.V. Appl. Phys. Lett. 89 (2006) 122106
17. Chisholm J.A., and Bristowe P.D. Comput. Mater. Sci. 2 (2001) 73
18. Wang C.K., Chang S.J., Su Y.K., Chiou Y.Z., Chang C.S., Lin T.K., Liu H.L., and Tang J.J. Semicond. Sci. Technol. 20 (2005) 485