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Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

(8) Martens, M a Schlegel, J a Vogt, P a Brunner, F b Lossy, R b Wurfl J b Weyers, M b Kneissl, M a,b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LAYER; ALGAN/GAN HETEROSTRUCTURES; BAND GAP ENERGY; CUTOFF WAVELENGTHS; HETEROSTRUCTURE INTERFACES; HIGH CONDUCTIVITY; HIGH CURRENTS; HIGH GAIN; MESA STRUCTURE; OPTICAL SWITCHING; OPTOELECTRONIC PROPERTIES; ORDERS OF MAGNITUDE; PERSISTENT PHOTOCONDUCTIVITY; RESPONSIVITY; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS; UV ILLUMINATIONS;

GALLIUM NITRIDE; HETEROJUNCTIONS; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHASE INTERFACES; PHOTODETECTORS; TWO DIMENSIONAL ELECTRON GAS;

BIAS VOLTAGE;

EID: 79959390484 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595303 Document Type: Article

Times cited : (96)

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