AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers

IET Optoelectronics

Volumn 1, Issue 4, 2007, Pages 147-149

  Hung, H ^a   Chang, S J ^a   Lin, Y C ^a   Kuan, H ^b   Lin, R M ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FAR EAST UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTROCHEMICAL ETCHING; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTOR METAL BOUNDARIES; ULTRAVIOLET RADIATION;

CAP LAYERS; CONTACT ELECTRODES; DAMAGED SURFACES; ETCHED PHOTODETECTORS;

PHOTODETECTORS;

EID: 34548379478     PISSN: 17518768     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-opt:20060088     Document Type: Article

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