Nitride-based 2DEG photodetectors with a large AC responsivity

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 2023-2026

  Chang, S J ^a   Kuan, T M ^a   Ko, C H ^a   Su, Y K ^a   Webb, J B ^b   Bardwell, J A ^b   Liu, Y ^b   Tang, H ^b   Lin, W J ^c   Cherng, Y T ^c   Lan, W H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

2DEG; GaN; MOVPE; Photodetector

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS;

PHOTOGENERATED CARRIERS;

PHOTODETECTORS;

EID: 0043231405     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00246-6     Document Type: Article

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