Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1326-1331

  Torvik, John T ^a,b   Pankove, Jacques I ^a,b   Van Zeghbroeck, Bart J ^a,c  

^a IEEE

^b Astralux Inc   (United States)

^c UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

REJECTION RATIOS;

CAPACITANCE MEASUREMENT; ENERGY GAP; LEAKAGE CURRENTS; PHOTOSENSITIVITY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; ULTRAVIOLET DETECTORS; VOLTAGE MEASUREMENT;

PHOTODETECTORS;

EID: 0032635514     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772472     Document Type: Article

References (19)

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