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Volumn 28, Issue 7, 2013, Pages

III-nitride semiconductors for intersubband optoelectronics: A review

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; ELECTROOPTICAL MODULATORS; III-NITRIDE QUANTUM WELLS; III-NITRIDE SEMICONDUCTORS; LONGITUDINAL OPTICAL; THEORETICAL CALCULATIONS; THZ QUANTUM CASCADE LASERS; ULTRAFAST PHOTONIC DEVICES;

EID: 84879584939     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/7/074022     Document Type: Review
Times cited : (191)

References (256)
  • 1
    • 3543127898 scopus 로고
    • Resonance spectroscopy of electronic levels in a surface accumulation layer
    • 10.1103/PhysRevLett.32.1251 0031-9007
    • Kamgar A, Kneschaurek P, Dorda G and Koch J 1974 Resonance spectroscopy of electronic levels in a surface accumulation layer Phys. Rev. Lett. 32 1251-4
    • (1974) Phys. Rev. Lett. , vol.32 , Issue.22 , pp. 1251-1254
    • Kamgar, A.1    Kneschaurek, P.2    Dorda, G.3    Koch, J.4
  • 2
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • 10.1103/RevModPhys.54.437 0034-6861
    • Ando T, Fowler A B and Stern F 1982 Electronic properties of two-dimensional systems Rev. Mod. Phys. 54 437-672
    • (1982) Rev. Mod. Phys. , vol.54 , Issue.2 , pp. 437-672
    • Ando, T.1    Fowler, A.B.2    Stern, F.3
  • 4
    • 0020717964 scopus 로고
    • Application of internal photoemission from quantum-well and heterojunction superlattices to infrared photodetectors
    • DOI 10.1016/0020-0891(83)90018-0
    • Chiu L C, Smith J S, Margalit S, Yariv A and Cho A Y 1983 Application of internal photoemission from quantum-well and heterojunction superlattices to infrared photodetectors Infrared Phys. 23 93-7 (Pubitemid 13559246)
    • (1983) Infrared Physics , vol.23 , Issue.2 , pp. 93-97
    • Chiu, L.C.1    Smith, J.S.2    Margalit, S.3    Yariv, A.4    Cho, A.Y.5
  • 6
    • 0021500763 scopus 로고
    • New mode of ir detection using quantum wells
    • DOI 10.1063/1.95343
    • Coon D D and Karunasiri R P G 1984 New mode of IR detection using quantum wells Appl. Phys. Lett. 45 649-51 (Pubitemid 14646933)
    • (1984) Applied Physics Letters , vol.45 , Issue.6 , pp. 649-651
    • Coon, D.D.1    Karunasiri, R.P.G.2
  • 7
    • 0005247419 scopus 로고
    • Fast response quantum well photodetectors
    • 10.1063/1.337085 0021-8979
    • Coon D D, Karunasiri R P G and Liu H C 1986 Fast response quantum well photodetectors J. Appl. Phys. 60 2636-8
    • (1986) J. Appl. Phys. , vol.60 , Issue.7 , pp. 2636-2638
    • Coon, D.D.1    Karunasiri, R.P.G.2    Liu, H.C.3
  • 8
    • 21544434396 scopus 로고
    • First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well
    • 10.1063/1.95742 0003-6951
    • West L C and Eglash S J 1985 First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well Appl. Phys. Lett. 46 1156-8
    • (1985) Appl. Phys. Lett. , vol.46 , Issue.12 , pp. 1156-1158
    • West, L.C.1    Eglash, S.J.2
  • 9
    • 36549103775 scopus 로고
    • New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices
    • 10.1063/1.97928 0003-6951
    • Levine B F, Choi K K, Bethea C G, Walker J and Malik R J 1987 New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices Appl. Phys. Lett. 50 1092-4
    • (1987) Appl. Phys. Lett. , vol.50 , Issue.16 , pp. 1092-1094
    • Levine, B.F.1    Choi, K.K.2    Bethea, C.G.3    Walker, J.4    Malik, R.J.5
  • 10
    • 0027687152 scopus 로고
    • Quantum-well infrared photodetectors
    • 10.1063/1.354252 0021-8979
    • Levine B F 1993 Quantum-well infrared photodetectors J. Appl. Phys. 74 R1-81
    • (1993) J. Appl. Phys. , vol.74 , Issue.8 , pp. 1-81
    • Levine, B.F.1
  • 12
    • 0034906243 scopus 로고    scopus 로고
    • Band-offset trends in nitride heterojunctions
    • 10.1103/PhysRevB.63.245306 0163-1829 B 245306
    • Binggeli N, Ferrara P and Baldereschi A 2001 Band-offset trends in nitride heterojunctions Phys. Rev. B 63 245306
    • (2001) Phys. Rev. , vol.63 , Issue.24
    • Binggeli, N.1    Ferrara, P.2    Baldereschi, A.3
  • 13
    • 0036749286 scopus 로고    scopus 로고
    • Quasiparticle calculations of band offsets at AlN-GaN interfaces
    • DOI 10.1016/S0038-1098(02)00326-5, PII S0038109802003265
    • Cociorva D, Aulbur W G and Wilkins J W 2002 Quasiparticle calculations of band offsets at AlN-GaN interfaces Solid State Commun. 124 63-66 (Pubitemid 35152389)
    • (2002) Solid State Communications , vol.124 , Issue.1-2 , pp. 63-66
    • Cociorva, D.1    Aulbur, W.G.2    Wilkins, J.W.3
  • 15
    • 0031199531 scopus 로고    scopus 로고
    • Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells
    • 10.1143/JJAP.36.L1006 0021-4922
    • Suzuki N and Iizuka N 1997 Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells Japan. J. Appl. Phys. 36 L1006-8
    • (1997) Japan. J. Appl. Phys. , vol.36 , Issue.8 PART 2 A
    • Suzuki, N.1    Iizuka, N.2
  • 16
    • 77955692217 scopus 로고    scopus 로고
    • Intersubband transition-based processes and devices in AlN/GaN-based heterostructures
    • 10.1109/JPROC.2009.2035465 0018-9219
    • Hofstetter D et al 2010 Intersubband transition-based processes and devices in AlN/GaN-based heterostructures Proc. IEEE 98 1234-48
    • (2010) Proc. IEEE , vol.98 , Issue.7 , pp. 1234-1248
    • Hofstetter, D.1
  • 17
    • 73549124578 scopus 로고    scopus 로고
    • GaN/AlGaN intersubband optoelectronic devices
    • 10.1088/1367-2630/11/12/125023 1367-2630 125023
    • Machhadani H et al 2009 GaN/AlGaN intersubband optoelectronic devices New J. Phys. 11 125023
    • (2009) New J. Phys. , vol.11 , Issue.12
    • Machhadani, H.1
  • 19
    • 25144440423 scopus 로고    scopus 로고
    • Photon absorption in the Restrahlen band of thin films of GaN and AlN: Two phonon effects
    • DOI 10.1063/1.2034648, 043517
    • Yang J, Brown G J, Dutta M and Stroscio M A 2005 Photon absorption in the restrahlen band of thin films of GaN and AlN: Two phonon effects J. Appl. Phys. 98 043517 (Pubitemid 41344983)
    • (2005) Journal of Applied Physics , vol.98 , Issue.4 , pp. 1-5
    • Yang, J.1    Brown, G.J.2    Dutta, M.3    Stroscio, M.A.4
  • 23
    • 0001090718 scopus 로고    scopus 로고
    • Electron scattering rates in AlGaN/GaN quantum wells for 1.55-μm inter-subband transition
    • 10.1143/JJAP.37.L369 0021-4922
    • Suzuki N and Iizuka N 1998 Electron scattering rates in AlGaN/GaN quantum wells for 1.55-μm inter-subband transition Japan. J. Appl. Phys. 37 L369-71
    • (1998) Japan. J. Appl. Phys. , vol.37 , Issue.4 PART 2 A
    • Suzuki, N.1    Iizuka, N.2
  • 26
    • 0642275027 scopus 로고    scopus 로고
    • Spontaneous polarization and piezoelectric constants of III-V nitrides
    • 10.1103/PhysRevB.56.R10024 0163-1829 B
    • Bernardini F, Fiorentini V and Vanderbilt D 1997 Spontaneous polarization and piezoelectric constants of III-V nitrides Phys. Rev. B 56 R10024-7
    • (1997) Phys. Rev. , vol.56 , Issue.16
    • Bernardini, F.1    Fiorentini, V.2    Vanderbilt, D.3
  • 28
    • 56349084739 scopus 로고    scopus 로고
    • GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
    • 10.1063/1.3003507 0021-8979 093501
    • Kandaswamy P K et al 2008 GaN/AlN short-period superlattices for intersubband optoelectronics: a systematic study of their epitaxial growth, design, and performance J. Appl. Phys. 104 093501
    • (2008) J. Appl. Phys. , vol.104 , Issue.9
    • Kandaswamy, P.K.1
  • 29
    • 34848815902 scopus 로고    scopus 로고
    • Optically nonlinear effects in intersubband transitions of GaNAlN -based superlattice structures
    • DOI 10.1063/1.2793190
    • Hofstetter D, Baumann E, Giorgetta F R, Guillot F, Leconte S and Monroy E 2007 Optically nonlinear effects in intersubband transitions of GaN/AlN-based superlattice structures Appl. Phys. Lett. 91 131115 (Pubitemid 47502542)
    • (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 131115
    • Hofstetter, D.1    Baumann, E.2    Giorgetta, F.R.3    Guillot, F.4    Leconte, S.5    Monroy, E.6
  • 31
    • 64149099923 scopus 로고    scopus 로고
    • Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots
    • 10.1063/1.3114424 0003-6951 132104
    • Nevou L, Mangeney J, Tchernycheva M, Julien F H, Guillot F and Monroy E 2009 Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots Appl. Phys. Lett. 94 132104
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.13
    • Nevou, L.1    Mangeney, J.2    Tchernycheva, M.3    Julien, F.H.4    Guillot, F.5    Monroy, E.6
  • 33
    • 0000706158 scopus 로고    scopus 로고
    • Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
    • 10.1063/1.1332108 0003-6951
    • Gmachl C, Ng H M, George Chu S-N and Cho A Y 2000 Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Appl. Phys. Lett. 77 3722-4
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.23 , pp. 3722-3724
    • Gmachl, C.1    Ng, H.M.2    George Chu, S.-N.3    Cho, A.Y.4
  • 34
    • 0035839918 scopus 로고    scopus 로고
    • 1-xN coupled double quantum wells
    • 10.1063/1.1403277 0003-6951
    • 1-x N coupled double quantum wells Appl. Phys. Lett. 79 1590-2
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.11 , pp. 1590-1592
    • Gmachl, C.1    Ng, H.M.2    Cho, A.Y.3
  • 36
    • 79956005542 scopus 로고    scopus 로고
    • Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
    • 10.1063/1.1505116 0003-6951
    • Iizuka N, Kaneko K and Suzuki N 2002 Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy Appl. Phys. Lett. 81 1803-5
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.10 , pp. 1803-1805
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 37
    • 79956036115 scopus 로고    scopus 로고
    • Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
    • DOI 10.1063/1.1500412
    • Heber J D, Gmachl C, Ng H M and Cho A Y 2002 Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures Appl. Phys. Lett. 81 1237-9 (Pubitemid 34963815)
    • (2002) Applied Physics Letters , vol.81 , Issue.7 , pp. 1237
    • Heber, J.D.1    Gmachl, C.2    Ng, H.M.3    Cho, A.Y.4
  • 38
    • 0942288607 scopus 로고    scopus 로고
    • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
    • 10.1063/1.1635985 0003-6951
    • Helman A et al 2003 Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy Appl. Phys. Lett. 83 5196-8
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.25 , pp. 5196-5198
    • Helman, A.1
  • 39
    • 0038142794 scopus 로고    scopus 로고
    • Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures
    • 10.1063/1.1577809 0021-8979
    • Zhou Q, Chen J, Pattada B, Manasreh M O, Xiu F, Puntigan S, He L, Ramaiah K S and Morkoç H 2003 Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures J. Appl. Phys. 93 10140-2
    • (2003) J. Appl. Phys. , vol.93 , Issue.12 , pp. 10140-10142
    • Zhou, Q.1    Chen, J.2    Pattada, B.3    Manasreh, M.O.4    Xiu, F.5    Puntigan, S.6    He, L.7    Ramaiah, K.S.8    Morkoç, H.9
  • 41
    • 0037422959 scopus 로고    scopus 로고
    • Adatom kinetics on and below the surface: The existence of a new diffusion channel
    • 10.1103/PhysRevLett.90.056101 0031-9007 056101
    • Neugebauer J, Zywietz T, Scheffler M, Northrup J, Chen H and Feenstra R 2003 Adatom kinetics on and below the surface: the existence of a new diffusion channel Phys. Rev. Lett. 90 056101
    • (2003) Phys. Rev. Lett. , vol.90 , Issue.5
    • Neugebauer, J.1    Zywietz, T.2    Scheffler, M.3    Northrup, J.4    Chen, H.5    Feenstra, R.6
  • 42
    • 0011796924 scopus 로고    scopus 로고
    • Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
    • 10.1063/1.1305830 0021-8979
    • Heying B, Averbeck R, Chen L F, Haus E, Riechert H and Speck J S 2000 Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy J. Appl. Phys. 88 1855-60
    • (2000) J. Appl. Phys. , vol.88 , Issue.4 , pp. 1855-1860
    • Heying, B.1    Averbeck, R.2    Chen, L.F.3    Haus, E.4    Riechert, H.5    Speck, J.S.6
  • 43
    • 79956002565 scopus 로고    scopus 로고
    • Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy
    • DOI 10.1063/1.1492853
    • Iliopoulos E and Moustakas T D 2002 Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 81 295-7 (Pubitemid 34803025)
    • (2002) Applied Physics Letters , vol.81 , Issue.2 , pp. 295
    • Iliopoulos, E.1    Moustakas, T.D.2
  • 45
    • 0038820031 scopus 로고    scopus 로고
    • Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy
    • 10.1063/1.1575929 0021-8979
    • Koblmueller G, Averbeck R, Geelhaar L, Riechert H, Hösler W and Pongratz P 2003 Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy J. Appl. Phys. 93 9591-7
    • (2003) J. Appl. Phys. , vol.93 , Issue.12 , pp. 9591-9597
    • Koblmueller, G.1    Averbeck, R.2    Geelhaar, L.3    Riechert, H.4    Hösler, W.5    Pongratz, P.6
  • 46
    • 0035891198 scopus 로고    scopus 로고
    • Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0 0 0 1)
    • 10.1103/PhysRevB.64.195406 0163-1829 B 195406
    • Mula G, Adelmann C, Moehl S, Oullier J and Daudin B 2001 Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0 0 0 1) Phys. Rev. B 64 195406
    • (2001) Phys. Rev. , vol.64 , Issue.19
    • Mula, G.1    Adelmann, C.2    Moehl, S.3    Oullier, J.4    Daudin, B.5
  • 47
    • 33645908487 scopus 로고    scopus 로고
    • Ga adsorbate on (0 0 0 1) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction
    • 10.1063/1.2181415 0021-8979 074902
    • Brown J S, Koblmülller G, Wu F, Averbeck R, Riechert H and Speck J S 2006 Ga adsorbate on (0 0 0 1) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction J. Appl. Phys. 99 074902
    • (2006) J. Appl. Phys. , vol.99 , Issue.7
    • Brown, J.S.1    Koblmülller, G.2    Wu, F.3    Averbeck, R.4    Riechert, H.5    Speck, J.S.6
  • 48
    • 0001562180 scopus 로고    scopus 로고
    • Structure of GaN(0 0 0 1): The laterally contracted Ga bilayer model
    • 10.1103/PhysRevB.61.9932 0163-1829 B
    • Northrup J, Neugebauer J, Feenstra R and Smith A 2000 Structure of GaN(0 0 0 1): the laterally contracted Ga bilayer model Phys. Rev. B 61 9932-5
    • (2000) Phys. Rev. , vol.61 , Issue.15 , pp. 9932-9935
    • Northrup, J.1    Neugebauer, J.2    Feenstra, R.3    Smith, A.4
  • 49
    • 13644274232 scopus 로고    scopus 로고
    • Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
    • DOI 10.1063/1.1853530, 041908
    • Koblmüller G, Brown J, Averbeck R, Riechert H, Pongratz P and Speck J S 2005 Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0 0 0 1) GaN Appl. Phys. Lett. 86 041908 (Pubitemid 40232170)
    • (2005) Applied Physics Letters , vol.86 , Issue.4 , pp. 0419081-0419083
    • Koblmuller, G.1    Brown, J.2    Averbeck, R.3    Riechert, H.4    Pongratz, P.5    Speck, J.S.6
  • 51
    • 78650907877 scopus 로고    scopus 로고
    • The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN terahertz quantum cascade structure by radio frequency molecular beam epitaxy
    • 10.1143/APEX.3.125501 1882-0778 125501
    • Terashima W and Hirayama H 2010 The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN terahertz quantum cascade structure by radio frequency molecular beam epitaxy Appl. Phys. Express 3 125501
    • (2010) Appl. Phys. Express , vol.3 , Issue.12
    • Terashima, W.1    Hirayama, H.2
  • 52
    • 78249266004 scopus 로고    scopus 로고
    • Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
    • 10.1063/1.3514236 0003-6951 191915
    • Koblmüller G, Reurings F, Tuomisto F and Speck J S 2010 Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature Appl. Phys. Lett. 97 191915
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.19
    • Koblmüller, G.1    Reurings, F.2    Tuomisto, F.3    Speck, J.S.4
  • 53
    • 3242710637 scopus 로고    scopus 로고
    • Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy
    • 10.1063/1.1759785 0021-8979
    • Gogneau N, Jalabert D, Monroy E, Sarigiannidou E, Rouvière J L, Shibata T, Tanaka M, Gerard J M and Daudin B 2004 Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy J. Appl. Phys. 96 1104-10
    • (2004) J. Appl. Phys. , vol.96 , Issue.2 , pp. 1104-1110
    • Gogneau, N.1    Jalabert, D.2    Monroy, E.3    Sarigiannidou, E.4    Rouvière, J.L.5    Shibata, T.6    Tanaka, M.7    Gerard, J.M.8    Daudin, B.9
  • 54
    • 0000394618 scopus 로고    scopus 로고
    • Kinetics of surfactant-mediated epitaxy of III-V semiconductors
    • 10.1103/PhysRevB.53.R13231 0163-1829 B
    • Grandjean N and Massies J 1996 Kinetics of surfactant-mediated epitaxy of III-V semiconductors Phys. Rev. B 53 R13231-4
    • (1996) Phys. Rev. , vol.53 , Issue.20
    • Grandjean, N.1    Massies, J.2
  • 55
    • 0000018299 scopus 로고    scopus 로고
    • Improved quality GaN grown by molecular beam epitaxy using in as a surfactant
    • DOI 10.1063/1.122539, PII S0003695198046440
    • Widmann F, Daudin B, Feuillet G, Pelekanos N and Rouvière J L 1998 Improved quality GaN grown by molecular beam epitaxy using In as a surfactant Appl. Phys. Lett. 73 2642-4 (Pubitemid 128674023)
    • (1998) Applied Physics Letters , vol.73 , Issue.18 , pp. 2642-2644
    • Widmann, F.1    Daudin, B.2    Feuillet, G.3    Pelekanos, N.4    Rouviere, J.L.5
  • 56
    • 0035914709 scopus 로고    scopus 로고
    • In as a surfactant for the growth of GaN (0 0 0 1) by plasma-assisted molecular-beam epitaxy
    • 10.1063/1.1419232 0003-6951
    • Kruse C, Einfeldt S, Böttcher T and Hommel D 2001 In as a surfactant for the growth of GaN (0 0 0 1) by plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 79 3425-7
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.21 , pp. 3425-3427
    • Kruse, C.1    Einfeldt, S.2    Böttcher, T.3    Hommel, D.4
  • 60
    • 70450277383 scopus 로고    scopus 로고
    • Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition
    • 10.1063/1.3267101 0003-6951 201906
    • Bayram C, Péré-laperne N and Razeghi M 2009 Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 95 201906
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.20
    • Bayram, C.1    Péré-Laperne, N.2    Razeghi, M.3
  • 61
    • 70350423935 scopus 로고    scopus 로고
    • Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer
    • 10.1063/1.3253715 0003-6951 161908
    • Sodabanlu H, Yang J-S, Sugiyama M, Shimogaki Y and Nakano Y 2009 Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer Appl. Phys. Lett. 95 161908
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.16
    • Sodabanlu, H.1    Yang, J.-S.2    Sugiyama, M.3    Shimogaki, Y.4    Nakano, Y.5
  • 62
    • 70350423934 scopus 로고    scopus 로고
    • Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
    • 10.1063/1.3254230 0003-6951 162111
    • Yang J-S, Sodabanlu H, Sugiyama M, Nakano Y and Shimogaki Y 2009 Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method Appl. Phys. Lett. 95 162111
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.16
    • Yang, J.-S.1    Sodabanlu, H.2    Sugiyama, M.3    Nakano, Y.4    Shimogaki, Y.5
  • 64
    • 33947172333 scopus 로고    scopus 로고
    • All-optical switch utilizing intersubband transition in GaN quantum wells
    • 10.1109/JQE.2006.878189 0018-9197
    • Iizuka N, Kaneko K and Suzuki N 2006 All-optical switch utilizing intersubband transition in GaN quantum wells IEEE J. Quantum Electron. 42 765-71
    • (2006) IEEE J. Quantum Electron. , vol.42 , Issue.8 , pp. 765-771
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 67
    • 0002835692 scopus 로고    scopus 로고
    • Detects and interfaces in GaN epitaxy
    • 0883-7694
    • Ponce F A 1997 Detects and interfaces in GaN epitaxy MRS Bull. 22 51-57
    • (1997) MRS Bull. , vol.22 , pp. 51-57
    • Ponce, F.A.1
  • 68
    • 9944258416 scopus 로고    scopus 로고
    • Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
    • 10.1016/j.jcrysgro.2004.08.012 0022-0248
    • Moran B, Wu F, Romanov A E, Mishra U K, Denbaars S P and Speck J S 2004 Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer J. Cryst. Growth 273 38-47
    • (2004) J. Cryst. Growth , vol.273 , Issue.1-2 , pp. 38-47
    • Moran, B.1    Wu, F.2    Romanov, A.E.3    Mishra, U.K.4    Denbaars, S.P.5    Speck, J.S.6
  • 69
    • 20844459634 scopus 로고    scopus 로고
    • Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy
    • DOI 10.1063/1.1900310, 151905
    • Kehagias T, Delimitis A, Komninou P, Iliopoulos E, Dimakis E, Georgakilas A and Nouet G 2005 Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0 0 0 1) by molecular-beam epitaxy Appl. Phys. Lett. 86 151905 (Pubitemid 40861397)
    • (2005) Applied Physics Letters , vol.86 , Issue.15 , pp. 1-3
    • Kehagias, Th.1    Delimitis, A.2    Komninou, Ph.3    Iliopoulos, E.4    Dimakis, E.5    Georgakilas, A.6    Nouet, G.7
  • 71
    • 33751078026 scopus 로고    scopus 로고
    • Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures
    • DOI 10.1063/1.2388895
    • Liu R, Mei J, Srinivasan S, Ponce F A, Omiya H, Narukawa Y and Mukai T 2006 Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures Appl. Phys. Lett. 89 201911 (Pubitemid 44772456)
    • (2006) Applied Physics Letters , vol.89 , Issue.20 , pp. 201911
    • Liu, R.1    Mei, J.2    Srinivasan, S.3    Ponce, F.A.4    Omiya, H.5    Narukawa, Y.6    Mukai, T.7
  • 72
    • 0011579775 scopus 로고    scopus 로고
    • Strain relaxation in AlGaN/GaN superlattices grown on GaN
    • DOI 10.1063/1.1342020
    • Einfeldt S, Heinke H, Kirchner V and Hommel D 2001 Strain relaxation in AlGaN/GaN superlattices grown on GaN J. Appl. Phys. 89 2160-7 (Pubitemid 33661987)
    • (2001) Journal of Applied Physics , vol.89 , Issue.4 , pp. 2160-2167
    • Einfeldt, S.1    Heinke, H.2    Kirchner, V.3    Hommel, D.4
  • 77
    • 85099606455 scopus 로고    scopus 로고
    • Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy
    • 10.1063/1.3618680 0021-8979 033501
    • Kotsar Y, Doisneau B, Bellet-Amalric E, Das A, Sarigiannidou E and Monroy E 2011 Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy J. Appl. Phys. 110 033501
    • (2011) J. Appl. Phys. , vol.110 , Issue.3
    • Kotsar, Y.1    Doisneau, B.2    Bellet-Amalric, E.3    Das, A.4    Sarigiannidou, E.5    Monroy, E.6
  • 78
    • 0000049154 scopus 로고
    • Selection rules of intersubband transitions in conduction-band quantum wells
    • 10.1103/PhysRevB.50.7474 0163-1829 B
    • Yang R, Xu J and Sweeny M 1994 Selection rules of intersubband transitions in conduction-band quantum wells Phys. Rev. B 50 7474-82
    • (1994) Phys. Rev. , vol.50 , Issue.11 , pp. 7474-7482
    • Yang, R.1    Xu, J.2    Sweeny, M.3
  • 79
    • 33845334213 scopus 로고    scopus 로고
    • Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths
    • DOI 10.1016/j.spmi.2006.09.020, PII S0749603606001406
    • Guillot F, Amstatt B, Bellet-Amalric E, Monroy E, Nevou L, Doyennette L, Julien F H and Dang L S 2006 Effect of Si doping on GaN/AlN multiple-quantum- well structures for intersubband optoelectronics at telecommunication wavelengths Superlatt. Microstruct. 40 306-12 (Pubitemid 44873069)
    • (2006) Superlattices and Microstructures , vol.40 , Issue.4-6 SPEC. ISS. , pp. 306-312
    • Guillot, F.1    Amstatt, B.2    Bellet-Amalric, E.3    Monroy, E.4    Nevou, L.5    Doyennette, L.6    Julien, F.H.7    Dang, L.S.8
  • 81
    • 34547784042 scopus 로고    scopus 로고
    • Intersubband absorption at 1.5-3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire
    • 10.1002/pssb.200675606 0370-1972 B
    • Liu X Y, Holmström P, Jänes P, Thylén L and Andersson T G 2007 Intersubband absorption at 1.5-3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire Phys. Status Solidi B 244 2892-905
    • (2007) Phys. Status Solidi , vol.244 , Issue.8 , pp. 2892-2905
    • Liu, X.Y.1    Holmström, P.2    Jänes, P.3    Thylén, L.4    Andersson, T.G.5
  • 82
    • 0032631739 scopus 로고    scopus 로고
    • Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells
    • 10.1143/JJAP.38.L363 0021-4922
    • Suzuki N and Iizuka N 1999 Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells Japan. J. Appl. Phys. 38 L363-5
    • (1999) Japan. J. Appl. Phys. , vol.38 , Issue.4 PART 2 A
    • Suzuki, N.1    Iizuka, N.2
  • 83
    • 1842786663 scopus 로고    scopus 로고
    • Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions
    • DOI 10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.0.CO;2-7
    • Ng H M, Gmachl C, Siegrist T, Chu S N G and Cho A Y 2001 Growth and characterization of GaN/AlGaN superlattices for near-infrared intersubband transitions Phys. Status Solidi a 188 825-31 (Pubitemid 33700256)
    • (2001) Physica Status Solidi (A) Applied Research , vol.188 , Issue.2 , pp. 825-831
    • Ng, H.M.1    Gmachl, C.2    Siegrist, T.3    Chu, S.N.G.4    Cho, A.Y.5
  • 84
    • 0036925198 scopus 로고    scopus 로고
    • Recent progress in GaN-based superlattices for near-infrared intersubband transitions
    • DOI 10.1002/1521-3951(200212)234:3<817::AID-PSSB817>3.0.CO;2-4
    • Ng H M, Gmachl C, Heber J D, Hsu J W P, Chu S N G and Cho A Y 2002 Recent progress in GaN-based superlattices for near-infrared intersubband transitions Phys. Status Solidi b 234 817-21 (Pubitemid 36027904)
    • (2002) Physica Status Solidi (B) Basic Research , vol.234 , Issue.3 , pp. 817-821
    • Ng, H.M.1    Gmachl, C.2    Heber, J.D.3    Hsu, J.W.P.4    Chu, S.N.G.5    Cho, A.Y.6
  • 87
    • 84867051667 scopus 로고    scopus 로고
    • Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition
    • 10.1063/1.4754543 0021-8979 063526
    • Tian W et al 2012 Tunability of intersubband transition wavelength in the atmospheric window in AlGaN/GaN multi-quantum wells grown on different AlGaN templates by metalorganic chemical vapor deposition J. Appl. Phys. 112 063526
    • (2012) J. Appl. Phys. , vol.112 , Issue.6
    • Tian, W.1
  • 88
    • 84855968784 scopus 로고    scopus 로고
    • High-quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions
    • 10.1063/1.3675468 0021-8979 013514
    • Bayram C 2012 High-quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions J. Appl. Phys. 111 013514
    • (2012) J. Appl. Phys. , vol.111 , Issue.1
    • Bayram, C.1
  • 89
    • 79953762180 scopus 로고    scopus 로고
    • 1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer
    • 10.1063/1.3573798 0003-6951 132105
    • 1-x N/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer Appl. Phys. Lett. 98 132105
    • (2011) Appl. Phys. Lett. , vol.98 , Issue.13
    • Huang, C.C.1
  • 90
    • 84862782243 scopus 로고    scopus 로고
    • Near-infrared absorption in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates
    • 10.1007/s11664-011-1881-9 0361-5235
    • Edmunds C, Tang L, Li D, Cervantes M, Gardner G, Paskova T, Manfra M J and Malis O 2012 Near-infrared absorption in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates J. Electron. Mater. 41 881-6
    • (2012) J. Electron. Mater. , vol.41 , Issue.5 , pp. 881-886
    • Edmunds, C.1    Tang, L.2    Li, D.3    Cervantes, M.4    Gardner, G.5    Paskova, T.6    Manfra, M.J.7    Malis, O.8
  • 92
    • 84866015782 scopus 로고    scopus 로고
    • Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
    • 10.1063/1.4751040 0003-6951 102104
    • Edmunds C, Tang L, Shao J, Li D, Cervantes M, Gardner G, Zakharov D N, Manfra M J and Malis O 2012 Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location Appl. Phys. Lett. 101 102104
    • (2012) Appl. Phys. Lett. , vol.101 , Issue.10
    • Edmunds, C.1    Tang, L.2    Shao, J.3    Li, D.4    Cervantes, M.5    Gardner, G.6    Zakharov, D.N.7    Manfra, M.J.8    Malis, O.9
  • 93
    • 0038082017 scopus 로고    scopus 로고
    • Calculation of near-infrared intersubband absorption spectra in GaN/AlN quantum wells
    • 10.1143/JJAP.42.132 0021-4922
    • Suzuki N, Iizuka N and Kaneko K 2003 Calculation of near-infrared intersubband absorption spectra in GaN/AlN quantum wells Japan. J. Appl. Phys. 42 132-9
    • (2003) Japan. J. Appl. Phys. , vol.42 , Issue.1 PART 1 , pp. 132-139
    • Suzuki, N.1    Iizuka, N.2    Kaneko, K.3
  • 96
    • 67249148539 scopus 로고    scopus 로고
    • Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells
    • 10.1063/1.3124373 0021-8979 093109
    • Cen L B, Shen B, Qin Z X and Zhang G Y 2009 Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys. 105 093109
    • (2009) J. Appl. Phys. , vol.105 , Issue.9
    • Cen, L.B.1    Shen, B.2    Qin, Z.X.3    Zhang, G.Y.4
  • 97
    • 62549106633 scopus 로고    scopus 로고
    • Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells
    • 10.1063/1.3091280 0021-8979 053106
    • Cen L B, Shen B, Qin Z X and Zhang G Y 2009 Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys. 105 053106
    • (2009) J. Appl. Phys. , vol.105 , Issue.5
    • Cen, L.B.1    Shen, B.2    Qin, Z.X.3    Zhang, G.Y.4
  • 98
    • 45149091731 scopus 로고    scopus 로고
    • Lattice-matched GaN-InAlN waveguides at λ = 1.55 μm grown by metal-organic vapor phase epitaxy
    • 10.1109/LPT.2007.912551 1041-1135
    • Lupu A et al 2008 Lattice-matched GaN-InAlN waveguides at λ = 1.55 μm grown by metal-organic vapor phase epitaxy IEEE Photon. Technol. Lett. 20 102-4
    • (2008) IEEE Photon. Technol. Lett. , vol.20 , Issue.2 , pp. 102-104
    • Lupu, A.1
  • 100
    • 33646135540 scopus 로고    scopus 로고
    • Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
    • 10.1063/1.2186971 0003-6951 151902
    • Nicolay S, Feltin E, Carlin J-F, Mosca M, Nevou L, Tchernycheva M, Julien F H, Ilegems M and Grandjean N 2006 Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: applications to intersubband transitions Appl. Phys. Lett. 88 151902
    • (2006) Appl. Phys. Lett. , vol.88 , Issue.15
    • Nicolay, S.1    Feltin, E.2    Carlin, J.-F.3    Mosca, M.4    Nevou, L.5    Tchernycheva, M.6    Julien, F.H.7    Ilegems, M.8    Grandjean, N.9
  • 102
    • 65449145136 scopus 로고    scopus 로고
    • Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices
    • 10.1063/1.3120551 0003-6951 161111
    • Malis O, Edmunds C, Manfra M J and Sivco D L 2009 Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices Appl. Phys. Lett. 94 161111
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.16
    • Malis, O.1    Edmunds, C.2    Manfra, M.J.3    Sivco, D.L.4
  • 107
    • 0031557568 scopus 로고    scopus 로고
    • Mid-infrared photoconductivity in InAs quantum dots
    • Berryman K W, Lyon S A and Segev M 1997 Mid-infrared photoconductivity in InAs quantum dots Appl. Phys. Lett. 70 1861-3 (Pubitemid 127637170)
    • (1997) Applied Physics Letters , vol.70 , Issue.14 , pp. 1861-1863
    • Berryman, K.W.1    Lyon, S.A.2    Segev, M.3
  • 108
    • 0001163227 scopus 로고    scopus 로고
    • Far-infrared photoconductivity in self-organized InAs quantum dots
    • DOI 10.1063/1.121252, PII S0003695198042168
    • Phillips J, Kamath K and Bhattacharya P 1998 Far-infrared photoconductivity in self-organized InAs quantum dots Appl. Phys. Lett. 72 2020-2 (Pubitemid 128671324)
    • (1998) Applied Physics Letters , vol.72 , Issue.16 , pp. 2020-2022
    • Phillips, J.1    Kamath, K.2    Bhattacharya, P.3
  • 109
    • 0030143645 scopus 로고    scopus 로고
    • The theory of quantum-dot infrared phototransistors
    • Ryzhii V 1996 The theory of quantum-dot infrared phototransistors Semicond. Sci. Technol. 11 759-65 (Pubitemid 126617978)
    • (1996) Semiconductor Science and Technology , vol.11 , Issue.5 , pp. 759-765
    • Ryzhii, V.1
  • 110
    • 0032487211 scopus 로고    scopus 로고
    • Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
    • DOI 10.1063/1.122328, PII S0003695198014405
    • Pan D, Towe E and Kennerly S 1998 Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors Appl. Phys. Lett. 73 1937-9 (Pubitemid 128672029)
    • (1998) Applied Physics Letters , vol.73 , Issue.14 , pp. 1937-1939
    • Pan, D.1    Towe, E.2    Kennerly, S.3
  • 112
    • 0035473528 scopus 로고    scopus 로고
    • Quantum-dot infrared photodetector with lateral carrier transport
    • 10.1063/1.1408269 0003-6951
    • Chu L, Zrenner A, Bichler M and Abstreiter G 2001 Quantum-dot infrared photodetector with lateral carrier transport Appl. Phys. Lett. 79 2249-51
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.14 , pp. 2249-2251
    • Chu, L.1    Zrenner, A.2    Bichler, M.3    Abstreiter, G.4
  • 113
    • 0001196684 scopus 로고    scopus 로고
    • Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
    • 10.1103/PhysRevB.56.R7069 0163-1829 B
    • Daudin B, Widmann F, Feuillet G, Samson Y, Arlery M and Rouvière J 1997 Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN Phys. Rev. B 56 R7069-72
    • (1997) Phys. Rev. , vol.56 , Issue.12
    • Daudin, B.1    Widmann, F.2    Feuillet, G.3    Samson, Y.4    Arlery, M.5    Rouvière, J.6
  • 117
    • 0000767948 scopus 로고    scopus 로고
    • From visible to white light emission by GaN quantum dots on Si(111) substrate
    • Damilano B, Grandjean N, Semond F, Massies J and Leroux M 1999 From visible to white light emission by GaN quantum dots on Si(1 1 1) substrate Appl. Phys. Lett. 75 962-4 (Pubitemid 129562144)
    • (1999) Applied Physics Letters , vol.75 , Issue.7 , pp. 962-964
    • Damilano, B.1    Grandjean, N.2    Semond, F.3    Massies, J.4    Leroux, M.5
  • 120
    • 79956020738 scopus 로고    scopus 로고
    • High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
    • DOI 10.1063/1.1482416
    • Miyamura M, Tachibana K and Arakawa Y 2002 High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 80 3937-9 (Pubitemid 34638099)
    • (2002) Applied Physics Letters , vol.80 , Issue.21 , pp. 3937
    • Miyamura, M.1    Tachibana, K.2    Arakawa, Y.3
  • 122
    • 0035939253 scopus 로고    scopus 로고
    • Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
    • 10.1063/1.1386405 0003-6951
    • Andreev A D and O'Reilly E P 2001 Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots Appl. Phys. Lett. 79 521-3
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.4 , pp. 521-523
    • Andreev, A.D.1    O'Reilly, E.P.2
  • 124
    • 0242427722 scopus 로고    scopus 로고
    • Self-consistent calculations of the optical properties of GaN quantum dots
    • 10.1103/PhysRevB.68.115305 0163-1829 B 115303
    • Ranjan V, Allan G, Priester C and Delerue C 2003 Self-consistent calculations of the optical properties of GaN quantum dots Phys. Rev. B 68 115303
    • (2003) Phys. Rev. , vol.68 , Issue.11
    • Ranjan, V.1    Allan, G.2    Priester, C.3    Delerue, C.4
  • 127
    • 72449195916 scopus 로고    scopus 로고
    • Photocurrent spectroscopy of bound-to-bound intraband transitions in GaN/AlN quantum dots
    • 10.1103/PhysRevB.80.155439 1098-0121 B 155439
    • Vardi A, Bahir G, Schacham S E, Kandaswamy P K and Monroy E 2009 Photocurrent spectroscopy of bound-to-bound intraband transitions in GaN/AlN quantum dots Phys. Rev. B 80 155439
    • (2009) Phys. Rev. , vol.80 , Issue.15
    • Vardi, A.1    Bahir, G.2    Schacham, S.E.3    Kandaswamy, P.K.4    Monroy, E.5
  • 129
    • 84871310028 scopus 로고    scopus 로고
    • Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
    • 10.1063/1.4770075 0003-6951 241914
    • Himwas C, Songmuang R, Dang L S, Bleuse J, Rapenne L, Sarigiannidou E and Monroy E 2012 Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots Appl. Phys. Lett. 101 241914
    • (2012) Appl. Phys. Lett. , vol.101 , Issue.24
    • Himwas, C.1    Songmuang, R.2    Dang, L.S.3    Bleuse, J.4    Rapenne, L.5    Sarigiannidou, E.6    Monroy, E.7
  • 130
    • 66749188282 scopus 로고    scopus 로고
    • Nonpolar and semipolar group III nitride-based materials
    • 10.1557/mrs2009.91 0883-7694
    • Speck J S and Chichibu S F 2011 Nonpolar and semipolar group III nitride-based materials MRS Bull. 34 304-12
    • (2011) MRS Bull. , vol.34 , Issue.5 , pp. 304-312
    • Speck, J.S.1    Chichibu, S.F.2
  • 131
    • 33746833562 scopus 로고    scopus 로고
    • Strain-induced polarization in wurtzite III-nitride semipolar layers
    • DOI 10.1063/1.2218385
    • Romanov A E, Baker T J, Nakamura S and Speck J S ERATO/JST UCSB Group 2006 Strain-induced polarization in wurtzite III-nitride semipolar layers J. Appl. Phys. 100 023522 (Pubitemid 44179534)
    • (2006) Journal of Applied Physics , vol.100 , Issue.2 , pp. 023522
    • Romanov, A.E.1    Baker, T.J.2    Nakamura, S.3    Speck, J.S.4
  • 134
    • 0037456936 scopus 로고    scopus 로고
    • Intersubband absorption at ∼2.1 μm in A-plane GaN/AlN multiple quantum wells
    • 10.1049/el:20030381 0013-5194
    • Gmachl C and Ng H M 2003 Intersubband absorption at ∼2.1 μm in A-plane GaN/AlN multiple quantum wells Electron. Lett. 39 567-9
    • (2003) Electron. Lett. , vol.39 , Issue.6 , pp. 567-569
    • Gmachl, C.1    Ng, H.M.2
  • 135
    • 33646578767 scopus 로고    scopus 로고
    • Monte Carlo modeling of phonon-assisted carrier transport in cubic and hexagonal gallium nitride
    • DOI 10.1007/s11082-006-0034-5
    • Brazis R and Raguotis R 2006 Monte Carlo modeling of phonon-assisted carrier transport in cubic and hexagonal gallium nitride Opt. Quantum Electron. 38 339-47 (Pubitemid 43723932)
    • (2006) Optical and Quantum Electronics , vol.38 , Issue.4-6 , pp. 339-347
    • Brazis, R.1    Raguotis, R.2
  • 136
    • 0032758798 scopus 로고    scopus 로고
    • Electronic structure calculations on nitride semiconductors
    • 10.1088/0268-1242/14/1/003 0268-1242
    • Pugh S K, Dugdale D J, Brand S and Abram R A 1999 Electronic structure calculations on nitride semiconductors Semicond. Sci. Technol. 14 23-31
    • (1999) Semicond. Sci. Technol. , vol.14 , Issue.1 , pp. 23-31
    • Pugh, S.K.1    Dugdale, D.J.2    Brand, S.3    Abram, R.A.4
  • 137
    • 0000032040 scopus 로고    scopus 로고
    • Optical gain and crystal symmetry in III-V nitride lasers
    • Suzuki M and Uenoyama T 1996 Optical gain and crystal symmetry in III-V nitride lasers Appl. Phys. Lett. 69 3378-80 (Pubitemid 126637796)
    • (1996) Applied Physics Letters , vol.69 , Issue.22 , pp. 3378-3380
    • Suzuki, M.1    Uenoyama, T.2
  • 138
    • 34547405191 scopus 로고    scopus 로고
    • Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices
    • DOI 10.1063/1.2764557
    • DeCuir E A, Fred E, Manasreh M O, Schörmann J, As D J and Lischka K 2007 Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices Appl. Phys. Lett. 91 041911 (Pubitemid 47174449)
    • (2007) Applied Physics Letters , vol.91 , Issue.4 , pp. 041911
    • Decuir, E.A.1    Fred, E.2    Manasreh, M.O.3    Schormann, J.4    As, D.J.5    Lischka, K.6
  • 140
    • 0027615318 scopus 로고
    • All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
    • 10.1109/3.234416 0018-9197
    • Noda S, Yamashita T, Ohya M, Muromoto Y and Sasaki A 1993 All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells IEEE J. Quantum Electron. 29 1640-7
    • (1993) IEEE J. Quantum Electron. , vol.29 , Issue.6 , pp. 1640-1647
    • Noda, S.1    Yamashita, T.2    Ohya, M.3    Muromoto, Y.4    Sasaki, A.5
  • 141
    • 10344235228 scopus 로고    scopus 로고
    • Femtosecond all-optical devices for ultrafast communication and signal processing
    • DOI 10.1088/1367-2630/6/1/183, PII S1367263004833536
    • Wada O 2004 Femtosecond all-optical devices for ultrafast communication and signal processing New J. Phys. 6 183 (Pubitemid 39632114)
    • (2004) New Journal of Physics , vol.6 , pp. 1-35
    • Wada, O.1
  • 142
    • 0000556985 scopus 로고    scopus 로고
    • Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells
    • 10.1063/1.127073 0003-6951
    • Iizuka N, Kaneko K, Suzuki N, Asano T, Noda S and Wada O 2000 Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells Appl. Phys. Lett. 77 648-50
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.5 , pp. 648-650
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3    Asano, T.4    Noda, S.5    Wada, O.6
  • 143
    • 0035868217 scopus 로고    scopus 로고
    • Sub-picosecond electron scattering time for λ ≃ 1.55μm intersubband transitions in GaN/AlGaN multiple quantum wells
    • DOI 10.1049/el:20010244
    • Gmachl C, Frolov S V, Ng H M, Chu S-N G and Cho A Y 2001 Sub-picosecond electron scattering time for λ = 1.55 μm intersubband transitions in GaN/AlGaN multiple quantum wells Electron. Lett. 37 378 (Pubitemid 32321815)
    • (2001) Electronics Letters , vol.37 , Issue.6 , pp. 378-380
    • Gmachl, C.1    Frolov, S.V.2    Ng, H.M.3    Chu, S.-N.G.4    Cho, A.Y.5
  • 144
    • 0042769364 scopus 로고    scopus 로고
    • Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells
    • 10.1063/1.1591247 0003-6951
    • Rapaport R, Chen G, Mitrofanov O, Gmachl C, Ng H M and Chu S N G 2003 Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells Appl. Phys. Lett. 83 263
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.2 , pp. 263
    • Rapaport, R.1    Chen, G.2    Mitrofanov, O.3    Gmachl, C.4    Ng, H.M.5    Chu, S.N.G.6
  • 145
    • 21244477134 scopus 로고    scopus 로고
    • Sub-picosecond all-optical gate utilizing aN intersubband transition
    • DOI 10.1364/OPEX.13.003835
    • Iizuka N, Kaneko K and Suzuki N 2005 Sub-picosecond all-optical gate utilizing GaN intersubband transition Opt. Express 13 3835-40 (Pubitemid 40899362)
    • (2005) Optics Express , vol.13 , Issue.10 , pp. 3835-3840
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 147
    • 0033738201 scopus 로고    scopus 로고
    • Intersubband transition in AlGaN-GaN quantum wells for ultrafast all-optical switching at communication wavelength
    • 10.1117/12.381452 0277-786X
    • Suzuki N, Iizuka N and Kaneko K 2000 Intersubband transition in AlGaN-GaN quantum wells for ultrafast all-optical switching at communication wavelength Proc. SPIE 3940 127-38
    • (2000) Proc. SPIE , vol.3940 , pp. 127-138
    • Suzuki, N.1    Iizuka, N.2    Kaneko, K.3
  • 148
    • 3843114448 scopus 로고    scopus 로고
    • Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells
    • 10.1049/el:20045434 0013-5194 962963
    • Iizuka N, Kaneko K and Suzuki N 2004 Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AlN quantum wells Electron. Lett. 40 962963
    • (2004) Electron. Lett. , vol.40 , Issue.15
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 149
    • 37549065593 scopus 로고    scopus 로고
    • Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides
    • 10.1364/OE.15.017922 1094-4087
    • Li Y, Bhattacharyya A, Thomidis C, Moustakas T D and Paiella R 2007 Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides Opt. Express 15 17922-7
    • (2007) Opt. Express , vol.15 , Issue.26 , pp. 17922-17927
    • Li, Y.1    Bhattacharyya, A.2    Thomidis, C.3    Moustakas, T.D.4    Paiella, R.5
  • 150
    • 80054996633 scopus 로고    scopus 로고
    • Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy
    • 10.1063/1.3650929 0003-6951 151102
    • Sodabanlu H, Yang J-S, Tanemura T, Sugiyama M, Shimogaki Y and Nakano Y 2011 Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 99 151102
    • (2011) Appl. Phys. Lett. , vol.99 , Issue.15
    • Sodabanlu, H.1    Yang, J.-S.2    Tanemura, T.3    Sugiyama, M.4    Shimogaki, Y.5    Nakano, Y.6
  • 152
    • 33646884673 scopus 로고    scopus 로고
    • Polarization dependent loss in III-nitride optical waveguides for telecommunication devices
    • DOI 10.1063/1.2195422
    • Iizuka N, Kaneko K and Suzuki N 2006 Polarization dependent loss in III-nitride optical waveguides for telecommunication devices J. Appl. Phys. 99 093107 (Pubitemid 43781911)
    • (2006) Journal of Applied Physics , vol.99 , Issue.9 , pp. 093107
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3
  • 153
    • 27744507338 scopus 로고    scopus 로고
    • Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm
    • DOI 10.1063/1.2132084, 201108
    • Sun G, Khurgin J B and Soref R A 2005 Nonlinear all-optical GaN/AlGaN
    • (2005) Applied Physics Letters , vol.87 , Issue.20 , pp. 1-3
    • Sun, G.1    Khurgin, J.B.2    Soref, R.A.3
  • 154
    • 33749051852 scopus 로고    scopus 로고
    • Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells
    • DOI 10.1088/0268-1242/21/8/022, PII S0268124206210046, 022
    • Li Y and Paiella R 2006 Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells Semicond. Sci. Technol. 21 1105-10 (Pubitemid 44458355)
    • (2006) Semiconductor Science and Technology , vol.21 , Issue.8 , pp. 1105-1110
    • Li, Y.1    Paiella, R.2
  • 156
    • 78650366946 scopus 로고    scopus 로고
    • Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
    • 10.1063/1.3525834 0003-6951 242102
    • Suzuki S, Asada M, Teranishi A, Sugiyama H and Yokoyama H 2010 Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature Appl. Phys. Lett. 97 242102
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.24
    • Suzuki, S.1    Asada, M.2    Teranishi, A.3    Sugiyama, H.4    Yokoyama, H.5
  • 157
    • 83455200195 scopus 로고    scopus 로고
    • Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz
    • 10.1063/1.3667191 0003-6951 233506
    • Feiginov M, Sydlo C, Cojocari O and Meissner P 2011 Resonant-tunnelling- diode oscillators operating at frequencies above 1.1 THz Appl. Phys. Lett. 99 233506
    • (2011) Appl. Phys. Lett. , vol.99 , Issue.23
    • Feiginov, M.1    Sydlo, C.2    Cojocari, O.3    Meissner, P.4
  • 158
    • 34247278251 scopus 로고    scopus 로고
    • Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
    • DOI 10.1088/0268-1242/22/2/018, PII S0268124207346750, 018
    • Leconte S, Guillot F, Sarigiannidou E and Monroy E 2007 Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures Semicond. Sci. Technol. 22 107-12 (Pubitemid 46620838)
    • (2007) Semiconductor Science and Technology , vol.22 , Issue.2 , pp. 107-112
    • Leconte, S.1    Guillot, F.2    Sarigiannidou, E.3    Monroy, E.4
  • 159
    • 58749095484 scopus 로고    scopus 로고
    • Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations
    • 10.1016/j.mejo.2008.07.066 0026-2692
    • Leconte S, Gerrer L and Monroy E 2009 Electronic transport through GaN/AlN single barriers: effect of polarisation and dislocations Microelectron. J. 40 339-41
    • (2009) Microelectron. J. , vol.40 , Issue.2 , pp. 339-341
    • Leconte, S.1    Gerrer, L.2    Monroy, E.3
  • 160
    • 0042512254 scopus 로고    scopus 로고
    • Correlated scanning kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
    • 10.1063/1.1586952 0021-8979
    • Simpkins B S, Yu E T, Waltereit P and Speck J S 2003 Correlated scanning kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride J. Appl. Phys. 94 1448-53
    • (2003) J. Appl. Phys. , vol.94 , Issue.3 , pp. 1448-1453
    • Simpkins, B.S.1    Yu, E.T.2    Waltereit, P.3    Speck, J.S.4
  • 161
    • 68649115558 scopus 로고    scopus 로고
    • Polarization-induced zener tunnel junctions in wide-band-gap heterostructures
    • 10.1103/PhysRevLett.103.026801 0031-9007 026801
    • Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P and Jena D 2009 Polarization-induced zener tunnel junctions in wide-band-gap heterostructures Phys. Rev. Lett. 103 026801
    • (2009) Phys. Rev. Lett. , vol.103 , Issue.2
    • Simon, J.1    Zhang, Z.2    Goodman, K.3    Xing, H.4    Kosel, T.5    Fay, P.6    Jena, D.7
  • 162
    • 0035530014 scopus 로고    scopus 로고
    • xN(0 0 0 1) strained structures with spontaneous polarization and piezoeffect
    • 10.1134/1.1356136 1063-7834
    • x N(0 0 0 1) strained structures with spontaneous polarization and piezoeffect Phys. Solid State 43 549-55
    • (2001) Phys. Solid State , vol.43 , Issue.3 , pp. 549-555
    • Grinyaev, S.N.1    Razzhuvalov, A.N.2
  • 163
    • 79956003733 scopus 로고    scopus 로고
    • AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
    • DOI 10.1063/1.1501157
    • Kikuchi A, Bannai R, Kishino K, Lee C-M and Chyi J-I 2002 AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy Appl. Phys. Lett. 81 1729-31 (Pubitemid 35037800)
    • (2002) Applied Physics Letters , vol.81 , Issue.9 , pp. 1729
    • Kikuchi, A.1    Bannai, R.2    Kishino, K.3    Lee, C.-M.4    Chyi, J.-I.5
  • 164
    • 33646433899 scopus 로고    scopus 로고
    • Current-voltage instabilities in GaN/AlGaN resonant tunnelling structures
    • 1610-1634 c
    • Foxon C T et al 2003 Current-voltage instabilities in GaN/AlGaN resonant tunnelling structures Phys. Status Solidi c 0 2389-92
    • (2003) Phys. Status Solidi , vol.0 , pp. 2389-2392
    • Foxon, C.T.1
  • 165
    • 0242497986 scopus 로고    scopus 로고
    • Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'
    • 10.1063/1.1622987 0003-6951
    • Belyaev A E, Foxon C T, Novikov S V, Makarovsky O, Eaves L, Kappers M J and Humphreys C J 2003 Comment on 'AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy' Appl. Phys. Lett. 83 3626
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.17 , pp. 3626
    • Belyaev, A.E.1    Foxon, C.T.2    Novikov, S.V.3    Makarovsky, O.4    Eaves, L.5    Kappers, M.J.6    Humphreys, C.J.7
  • 166
    • 0345023548 scopus 로고    scopus 로고
    • Response to 'Comment on "alN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy"'
    • 10.1063/1.1622988 0003-6951
    • Kikuchi A, Bannai R, Kishino K, Lee C-M and Chyi J-I 2003 Response to 'Comment on "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy"' Appl. Phys. Lett. 83 3628
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.17 , pp. 3628
    • Kikuchi, A.1    Bannai, R.2    Kishino, K.3    Lee, C.-M.4    Chyi, J.-I.5
  • 167
    • 0036920882 scopus 로고    scopus 로고
    • Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures
    • DOI 10.1002/1521-3951(200212)234:3<769::AID-PSSB769>3.0.CO;2-H
    • Indlekofer K M, Donà E, Malindretos J, Bertelli M, Kocan M, Rizzi A and Lüth H 2002 Modelling of polarization charge-induced asymmetry of I-V characteristics of AlN/GaN-based resonant tunnelling structures Phys. Status Solidi b 234 769-72 (Pubitemid 36027895)
    • (2002) Physica Status Solidi (B) Basic Research , vol.234 , Issue.3 , pp. 769-772
    • Indlekofer, K.M.1    Dona, E.2    Malindretos, J.3    Bertelli, M.4    Kocan, M.5    Rizzi, A.6    Luth, H.7
  • 169
    • 79551654967 scopus 로고    scopus 로고
    • Ballistic transport in GaN/AlGaN resonant tunneling diodes
    • 10.1063/1.3533975 0021-8979 023717
    • Sakr S, Warde E, Tchernycheva M and Julien F H 2011 Ballistic transport in GaN/AlGaN resonant tunneling diodes J. Appl. Phys. 109 023717
    • (2011) J. Appl. Phys. , vol.109 , Issue.2
    • Sakr, S.1    Warde, E.2    Tchernycheva, M.3    Julien, F.H.4
  • 170
    • 84855426678 scopus 로고    scopus 로고
    • Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures
    • 10.1103/PhysRevB.84.245313 1098-0121 B 245313
    • Berland K, Andersson T and Hyldgaard P 2011 Polarization-balanced design of heterostructures: application to AlN/GaN double-barrier structures Phys. Rev. B 84 245313
    • (2011) Phys. Rev. , vol.84 , Issue.24
    • Berland, K.1    Andersson, T.2    Hyldgaard, P.3
  • 171
    • 84862138177 scopus 로고    scopus 로고
    • Vertical transport in GaN/AlGaN resonant tunneling diodes and superlattices
    • 10.1007/s11664-012-1920-1 0361-5235
    • Warde E, Sakr S, Tchernycheva M and Julien F H 2012 Vertical transport in GaN/AlGaN resonant tunneling diodes and superlattices J. Electron. Mater. 41 965-70
    • (2012) J. Electron. Mater. , vol.41 , Issue.5 , pp. 965-970
    • Warde, E.1    Sakr, S.2    Tchernycheva, M.3    Julien, F.H.4
  • 175
    • 77952353814 scopus 로고    scopus 로고
    • Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
    • 10.1063/1.3372763 0021-8979 083505
    • Vashaei Z, Bayram C and Razeghi M 2010 Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature J. Appl. Phys. 107 083505
    • (2010) J. Appl. Phys. , vol.107 , Issue.8
    • Vashaei, Z.1    Bayram, C.2    Razeghi, M.3
  • 176
    • 77956369910 scopus 로고    scopus 로고
    • Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
    • 10.1063/1.3484280 0003-6951 092104
    • Bayram C, Vashaei Z and Razeghi M 2010 Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Appl. Phys. Lett. 97 092104
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.9
    • Bayram, C.1    Vashaei, Z.2    Razeghi, M.3
  • 177
    • 75749106310 scopus 로고    scopus 로고
    • AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
    • 10.1063/1.3294633 0003-6951 042103
    • Bayram C, Vashaei Z and Razeghi M 2010 AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 96 042103
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.4
    • Bayram, C.1    Vashaei, Z.2    Razeghi, M.3
  • 178
    • 78649307670 scopus 로고    scopus 로고
    • Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes
    • 10.1063/1.3515418 0003-6951 181109
    • Bayram C, Vashaei Z and Razeghi M 2010 Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes Appl. Phys. Lett. 97 181109
    • (2010) Appl. Phys. Lett. , vol.97 , Issue.18
    • Bayram, C.1    Vashaei, Z.2    Razeghi, M.3
  • 180
    • 80855141614 scopus 로고    scopus 로고
    • Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
    • 10.1063/1.3659468 0003-6951 182109
    • Boucherit M, Soltani A, Monroy E, Rousseau M, Deresmes D, Berthe M, Durand C and De Jaeger J-C 2011 Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes Appl. Phys. Lett. 99 182109
    • (2011) Appl. Phys. Lett. , vol.99 , Issue.18
    • Boucherit, M.1    Soltani, A.2    Monroy, E.3    Rousseau, M.4    Deresmes, D.5    Berthe, M.6    Durand, C.7    De Jaeger, J.-C.8
  • 188
    • 0035474453 scopus 로고    scopus 로고
    • High-speed mid-IR modulator using Stark shift in step quantum wells
    • DOI 10.1109/3.952539, PII S0018919701083282
    • Holmstrom P 2001 High-speed mid-IR modulator using stark shift in step quantum wells IEEE J. Quantum Electron. 37 1273-82 (Pubitemid 32990512)
    • (2001) IEEE Journal of Quantum Electronics , vol.37 , Issue.10 , pp. 1273-1282
    • Holmstrom, P.1
  • 189
    • 33947305236 scopus 로고    scopus 로고
    • Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells
    • 10.1109/JQE.2006.877297 0018-9197
    • Holmstrom P 2006 Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells IEEE J. Quantum Electron. 42 810-9
    • (2006) IEEE J. Quantum Electron. , vol.42 , Issue.8 , pp. 810-819
    • Holmstrom, P.1
  • 193
    • 85008053946 scopus 로고    scopus 로고
    • Electrooptical modulator at telecommunication wavelengths based on GaN/AlN coupled quantum wells
    • 10.1109/LPT.2008.919595 1041-1135
    • Kheirodin N et al 2008 Electrooptical modulator at telecommunication wavelengths based on GaN/AlN coupled quantum wells IEEE Photon. Technol. Lett. 20 724-6
    • (2008) IEEE Photon. Technol. Lett. , vol.20 , Issue.9 , pp. 724-726
    • Kheirodin, N.1
  • 194
    • 77951989297 scopus 로고    scopus 로고
    • Growth of intersubband GaN/AlGaN heterostructures
    • 10.1117/12.847082 0277-786X
    • Dussaigne A et al 2010 Growth of intersubband GaN/AlGaN heterostructures Proc. SPIE 7608 76080H
    • (2010) Proc. SPIE , vol.7608
    • Dussaigne, A.1
  • 195
    • 0027646497 scopus 로고
    • Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells
    • 10.1109/3.245560 0018-9197
    • Dupont E B, Delacourt D and Papuchon M 1993 Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells IEEE J. Quantum Electron. 29 2313-8
    • (1993) IEEE J. Quantum Electron. , vol.29 , Issue.8 , pp. 2313-2318
    • Dupont, E.B.1    Delacourt, D.2    Papuchon, M.3
  • 196
    • 55249117969 scopus 로고    scopus 로고
    • Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides
    • 10.1063/1.2996107 0021-8979 083101
    • Li Y, Bhattacharyya A, Thomidis C, Liao Y, Moustakas T D and Paiella R 2008 Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides J. Appl. Phys. 104 083101
    • (2008) J. Appl. Phys. , vol.104 , Issue.8
    • Li, Y.1    Bhattacharyya, A.2    Thomidis, C.3    Liao, Y.4    Moustakas, T.D.5    Paiella, R.6
  • 197
    • 84861485292 scopus 로고    scopus 로고
    • Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells
    • 10.1364/OE.20.012541 1094-4087
    • Lupu A, Tchernycheva M, Kotsar Y, Monroy E and Julien F H 2012 Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells Opt. Express 20 12541
    • (2012) Opt. Express , vol.20 , Issue.11 , pp. 12541
    • Lupu, A.1    Tchernycheva, M.2    Kotsar, Y.3    Monroy, E.4    Julien, F.H.5
  • 198
    • 84874096243 scopus 로고    scopus 로고
    • Direct measurement of refractive index change around intersubband transition resonance using free-space Mach-Zehnder interferometer
    • 10.1364/OE.21.003800 1094-4087
    • Gross E, Pesach A, Monroy E, Schacham S E and Bahir G 2013 Direct measurement of refractive index change around intersubband transition resonance using free-space Mach-Zehnder interferometer Opt. Express 21 3800-8
    • (2013) Opt. Express , vol.21 , Issue.3 , pp. 3800-3808
    • Gross, E.1    Pesach, A.2    Monroy, E.3    Schacham, S.E.4    Bahir, G.5
  • 199
    • 0002616415 scopus 로고
    • Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55 μm
    • 10.1063/1.100821 0003-6951
    • Zucker J E, Bar-Joseph I, Miller B I, Koren U and Chemla D S 1989 Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55 μm Appl. Phys. Lett. 54 10-2
    • (1989) Appl. Phys. Lett. , vol.54 , Issue.1 , pp. 10-12
    • Zucker, J.E.1    Bar-Joseph, I.2    Miller, B.I.3    Koren, U.4    Chemla, D.S.5
  • 200
    • 0023108359 scopus 로고
    • Electrooptical effects in silicon
    • 10.1109/JQE.1987.1073206 0018-9197
    • Soref R and Bennett B 1987 Electrooptical effects in silicon IEEE J. Quantum Electron. 23 123-9
    • (1987) IEEE J. Quantum Electron. , vol.23 , Issue.1 , pp. 123-129
    • Soref, R.1    Bennett, B.2
  • 201
    • 0041625712 scopus 로고    scopus 로고
    • GaN/AlN-based quantum-well infrared photodetector for 1.55 μm
    • 10.1063/1.1594265 0003-6951
    • Hofstetter D, Schad S-S, Wu H, Schaff W J and Eastman L F 2003 GaN/AlN-based quantum-well infrared photodetector for 1.55 μm Appl. Phys. Lett. 83 572-4
    • (2003) Appl. Phys. Lett. , vol.83 , Issue.3 , pp. 572-574
    • Hofstetter, D.1    Schad, S.-S.2    Wu, H.3    Schaff, W.J.4    Eastman, L.F.5
  • 205
    • 33646671264 scopus 로고    scopus 로고
    • Room temperature demonstration of GaNAlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
    • DOI 10.1063/1.2186108
    • Vardi A, Akopian N, Bahir G, Doyennette L, Tchernycheva M, Nevou L, Julien F H, Guillot F and Monroy E 2006 Room temperature demonstration of GaN/AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength Appl. Phys. Lett. 88 143101 (Pubitemid 43731508)
    • (2006) Applied Physics Letters , vol.88 , Issue.14 , pp. 143101
    • Vardi, A.1    Akopian, N.2    Bahir, G.3    Doyennette, L.4    Tchernycheva, M.5    Nevou, L.6    Julien, F.H.7    Guillot, F.8    Monroy, E.9
  • 206
    • 78650265048 scopus 로고    scopus 로고
    • Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots
    • 10.1063/1.3498817 0021-8979 104512
    • Vardi A, Bahir G, Schacham S E, Kandaswamy P K and Monroy E 2010 Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots J. Appl. Phys. 108 104512
    • (2010) J. Appl. Phys. , vol.108 , Issue.10
    • Vardi, A.1    Bahir, G.2    Schacham, S.E.3    Kandaswamy, P.K.4    Monroy, E.5
  • 208
    • 20644450567 scopus 로고    scopus 로고
    • Luminescence properties of defects in GaN
    • DOI 10.1063/1.1868059, 061301
    • Reshchikov M A and Morkoç H 2005 Luminescence properties of defects in GaN J. Appl. Phys. 97 061301 (Pubitemid 40833704)
    • (2005) Journal of Applied Physics , vol.97 , Issue.6 , pp. 1-95
    • Reshchikov, M.A.1    Morko, H.2
  • 209
    • 0037397570 scopus 로고    scopus 로고
    • Wide-bandgap semiconductor ultraviolet photodetectors
    • 0268-1242 201
    • Monroy E, Omn s F and Calle F 2003 Wide-bandgap semiconductor ultraviolet photodetectors Semicond. Sci. Technol. 18 R33-51
    • (2003) Semicond. Sci. Technol. , vol.18 , Issue.4
    • Monroy, E.1    Omn, S.F.2    Calle, F.3
  • 210
    • 33645519797 scopus 로고    scopus 로고
    • High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors
    • 10.1063/1.2185613 0003-6951 121112
    • Hofstetter D, Baumann E, Giorgetta F R, Graf M, Maier M, Guillot F, Bellet-Amalric E and Monroy E 2006 High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors Appl. Phys. Lett. 88 121112
    • (2006) Appl. Phys. Lett. , vol.88 , Issue.12
    • Hofstetter, D.1    Baumann, E.2    Giorgetta, F.R.3    Graf, M.4    Maier, M.5    Guillot, F.6    Bellet-Amalric, E.7    Monroy, E.8
  • 211
    • 34248357236 scopus 로고    scopus 로고
    • High frequency (f=2.37GHz) room temperature operation of 1.55m AlN/GaN-based intersubband detector
    • DOI 10.1049/el:20073458
    • Giorgetta F R, Baumann E, Guillot F, Monroy E and Hofstetter D 2007 High frequency (f = 2.37 GHz) room temperature operation of 1.55 μm AlN/GaN-based intersubband detector Electron. Lett. 43 185-7 (Pubitemid 46739405)
    • (2007) Electronics Letters , vol.43 , Issue.3 , pp. 185-187
    • Giorgetta, F.R.1    Baumann, E.2    Guillot, F.3    Monroy, E.4    Hofstetter, D.5
  • 212
    • 65449145116 scopus 로고    scopus 로고
    • Photodetectors based on intersubband transitions using III-nitride superlattice structures
    • 10.1088/0953-8984/21/17/174208 0953-8984 174208
    • Hofstetter D et al 2009 Photodetectors based on intersubband transitions using III-nitride superlattice structures J. Phys.: Condens. Matter 21 174208
    • (2009) J. Phys.: Condens. Matter , vol.21 , Issue.17
    • Hofstetter, D.1
  • 213
    • 0000543362 scopus 로고
    • Model system for optical nonlinearities: Asymmetric quantum wells
    • 10.1103/PhysRevB.44.11315 0163-1829 B
    • Rosencher E and Bois P 1991 Model system for optical nonlinearities: asymmetric quantum wells Phys. Rev. B 44 11315-27
    • (1991) Phys. Rev. , vol.44 , Issue.20 , pp. 11315-11327
    • Rosencher, E.1    Bois, P.2
  • 216
    • 79251630547 scopus 로고    scopus 로고
    • Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer
    • 10.1002/pssc.200880761 1862-6351 c
    • Hofstetter D, Baumann E, Giorgetta F R, Théron R, Guillot F, Monroy E, Golka S and Strasser G 2009 Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer Phys. Status Solidi c 6 S818-21
    • (2009) Phys. Status Solidi , vol.6 , Issue.S2
    • Hofstetter, D.1    Baumann, E.2    Giorgetta, F.R.3    Théron, R.4    Guillot, F.5    Monroy, E.6    Golka, S.7    Strasser, G.8
  • 218
    • 77950011558 scopus 로고    scopus 로고
    • Quantum cascade detectors
    • 10.1109/JQE.2009.2017929 0018-9197
    • Giorgetta F R et al 2009 Quantum cascade detectors IEEE J. Quantum Electron. 45 1039-52
    • (2009) IEEE J. Quantum Electron. , vol.45 , Issue.8 , pp. 1039-1052
    • Giorgetta, F.R.1
  • 221
    • 56249105411 scopus 로고    scopus 로고
    • High-speed operation of GaN/AlGaN quantum cascade detectors at λ ≈ 1.55 μm
    • 10.1063/1.3021376 0003-6951 193509
    • Vardi A et al 2008 High-speed operation of GaN/AlGaN quantum cascade detectors at λ ≈ 1.55 μm Appl. Phys. Lett. 93 193509
    • (2008) Appl. Phys. Lett. , vol.93 , Issue.19
    • Vardi, A.1
  • 224
    • 84872293254 scopus 로고    scopus 로고
    • GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth
    • 10.1063/1.4775374 0003-6951 011135
    • Sakr S et al 2013 GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth Appl. Phys. Lett. 102 011135
    • (2013) Appl. Phys. Lett. , vol.102 , Issue.1
    • Sakr, S.1
  • 225
    • 84862552286 scopus 로고    scopus 로고
    • Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μm
    • 10.1063/1.4707904 0003-6951 181103
    • Sakr S, Giraud E, Dussaigne A, Tchernycheva M, Grandjean N and Julien F H 2012 Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μm Appl. Phys. Lett. 100 181103
    • (2012) Appl. Phys. Lett. , vol.100 , Issue.18
    • Sakr, S.1    Giraud, E.2    Dussaigne, A.3    Tchernycheva, M.4    Grandjean, N.5    Julien, F.H.6
  • 227
    • 84863306676 scopus 로고    scopus 로고
    • Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
    • 10.1063/1.4729470 0003-6951 241113
    • Sudradjat F F, Zhang W, Woodward J, Durmaz H, Moustakas T D and Paiella R 2012 Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells Appl. Phys. Lett. 100 241113
    • (2012) Appl. Phys. Lett. , vol.100 , Issue.24
    • Sudradjat, F.F.1    Zhang, W.2    Woodward, J.3    Durmaz, H.4    Moustakas, T.D.5    Paiella, R.6
  • 228
    • 33750537064 scopus 로고    scopus 로고
    • Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3μ m
    • DOI 10.1049/el:20062282
    • Nevou L, Julien F H, Colombelli R, Guillot F and Monroy E 2006 Room-temperature intersubband emission of GaN/AlN quantum wells at λ = 2.3 μm Electron. Lett. 42 1308-9 (Pubitemid 44673049)
    • (2006) Electronics Letters , vol.42 , Issue.22 , pp. 1308-1309
    • Nevou, L.1    Julien, F.H.2    Colombelli, R.3    Guillot, F.4    Monroy, E.5
  • 229
    • 33947581241 scopus 로고    scopus 로고
    • Short wavelength (λ=2.13 μm) intersubband luminescence from GaNAlN quantum wells at room temperature
    • DOI 10.1063/1.2715001
    • Nevou L, Tchernycheva M, Julien F H, Guillot F and Monroy E 2007 Short wavelength (λ = 2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature Appl. Phys. Lett. 90 121106 (Pubitemid 46482183)
    • (2007) Applied Physics Letters , vol.90 , Issue.12 , pp. 121106
    • Nevou, L.1    Tchernycheva, M.2    Julien, F.H.3    Guillot, F.4    Monroy, E.5
  • 230
  • 232
    • 0037445012 scopus 로고    scopus 로고
    • Designing strain-balanced GaN/AlGaN quantum well structures: Application to intersubband devices at 1.3 and 1.55 μm wavelengths
    • 10.1063/1.1556177 0021-8979
    • Jovanović V D, Ikonić Z, Indjin D, Harrison P, Milanović V and Soref R A 2003 Designing strain-balanced GaN/AlGaN quantum well structures: application to intersubband devices at 1.3 and 1.55 μm wavelengths J. Appl. Phys. 93 3194-7
    • (2003) J. Appl. Phys. , vol.93 , Issue.6 , pp. 3194-3197
    • Jovanović, V.D.1    Ikonić, Z.2    Indjin, D.3    Harrison, P.4    Milanović, V.5    Soref, R.A.6
  • 237
    • 34548424447 scopus 로고    scopus 로고
    • Terahertz quantum-cascade lasers
    • 10.1038/nphoton.2007.166 1749-4885
    • Williams B S 2007 Terahertz quantum-cascade lasers Nature Photon. 1 517-25
    • (2007) Nature Photon. , vol.1 , Issue.9 , pp. 517-525
    • Williams, B.S.1
  • 238
    • 64149103432 scopus 로고    scopus 로고
    • 186 K operation of terahertz quantum-cascade lasers based on a diagonal design
    • 10.1063/1.3114418 0003-6951 131105
    • Kumar S, Hu Q and Reno J L 2009 186 K operation of terahertz quantum-cascade lasers based on a diagonal design Appl. Phys. Lett. 94 131105
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.13
    • Kumar, S.1    Hu, Q.2    Reno, J.L.3
  • 239
    • 0035945095 scopus 로고    scopus 로고
    • Magnetotunneling spectroscopy of resonant anticrossing in terahertz intersubband emitters
    • DOI 10.1063/1.1426694
    • Williams B S, Callebaut H, Hu Q and Reno J L 2001 Magnetotunneling spectroscopy of resonant anticrossing in terahertz intersubband emitters Appl. Phys. Lett. 79 4444 (Pubitemid 34047835)
    • (2001) Applied Physics Letters , vol.79 , Issue.26 , pp. 4444
    • Williams, B.S.1    Callebaut, H.2    Hu, Q.3    Reno, J.L.4
  • 240
    • 0037450208 scopus 로고    scopus 로고
    • 3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation
    • 10.1063/1.1554479 0003-6951
    • Williams B S, Callebaut H, Kumar S, Hu Q and Reno J L 2003 3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation Appl. Phys. Lett. 82 1015-7
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.7 , pp. 1015-1017
    • Williams, B.S.1    Callebaut, H.2    Kumar, S.3    Hu, Q.4    Reno, J.L.5
  • 241
    • 32444436447 scopus 로고    scopus 로고
    • Monte Carlo simulation of hot phonon effects in resonant-phonon-assisted terahertz quantum-cascade lasers
    • DOI 10.1063/1.2172225
    • Lü J T and Cao J C 2006 Monte Carlo simulation of hot phonon effects in resonant-phonon-assisted terahertz quantum-cascade lasers Appl. Phys. Lett. 88 061119 (Pubitemid 43228468)
    • (2006) Applied Physics Letters , vol.88 , Issue.6 , pp. 061119
    • Lu, J.T.1    Cao, J.C.2
  • 242
    • 2442568505 scopus 로고    scopus 로고
    • Simulation and design of GaN/AlGaN far-infrared (λ ∼ 34 μm) quantum-cascade laser
    • 10.1063/1.1707219 0003-6951
    • Jovanović V D, Indjin D, Ikonić Z and Harrison P 2004 Simulation and design of GaN/AlGaN far-infrared (λ ∼ 34 μm) quantum-cascade laser Appl. Phys. Lett. 84 2995-7
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.16 , pp. 2995-2997
    • Jovanović, V.D.1    Indjin, D.2    Ikonić, Z.3    Harrison, P.4
  • 244
    • 20944441391 scopus 로고    scopus 로고
    • Optically pumped terahertz laser based on intersubband transitions in a GaNAlGaN double quantum well
    • DOI 10.1063/1.1900929, 103106
    • Vukmirović N, Jovanović V D, Indjin D, Ikonić Z, Harrison P and Milanović V 2005 Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well J. Appl. Phys. 97 103106 (Pubitemid 40866023)
    • (2005) Journal of Applied Physics , vol.97 , Issue.10 , pp. 1-5
    • Vukmirovic, N.1    Jovanovic, V.D.2    Indjin, D.3    Ikonic, Z.4    Harrison, P.5    Milanovic, V.6
  • 245
    • 40849096329 scopus 로고    scopus 로고
    • Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
    • DOI 10.1063/1.2894508
    • Bellotti E, Driscoll K, Moustakas T D and Paiella R 2008 Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures Appl. Phys. Lett. 92 101112 (Pubitemid 351393877)
    • (2008) Applied Physics Letters , vol.92 , Issue.10 , pp. 101112
    • Bellotti, E.1    Driscoll, K.2    Moustakas, T.D.3    Paiella, R.4
  • 246
    • 78649369577 scopus 로고    scopus 로고
    • Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors
    • 10.1002/pssc.200880772 1862-6351 c
    • Terashima W and Hirayama H 2009 Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors Phys. Status Solidi c 6 S615-8
    • (2009) Phys. Status Solidi , vol.6 , Issue.S2
    • Terashima, W.1    Hirayama, H.2
  • 248
    • 80052780577 scopus 로고    scopus 로고
    • Active layer design of THz GaN quantum cascade lasers
    • 10.1117/12.888007 0277-786X 802309
    • Chou H, Manzur T and Anwar M 2011 Active layer design of THz GaN quantum cascade lasers Proc. SPIE 8023 802309
    • (2011) Proc. SPIE , vol.8023
    • Chou, H.1    Manzur, T.2    Anwar, M.3
  • 249
    • 84861531881 scopus 로고    scopus 로고
    • Terahertz dual-wavelength quantum cascade laser based on GaN active region
    • 10.1016/j.optlastec.2011.07.020 0030-3992
    • Mirzaei B, Rostami A and Baghban H 2012 Terahertz dual-wavelength quantum cascade laser based on GaN active region Opt. Laser Technol. 44 378-83
    • (2012) Opt. Laser Technol. , vol.44 , Issue.2 , pp. 378-383
    • Mirzaei, B.1    Rostami, A.2    Baghban, H.3
  • 251
    • 79960745237 scopus 로고    scopus 로고
    • Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate
    • 10.1002/pssc.201000878 1862-6351 c
    • Terashima W and Hirayama H 2011 Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate Phys. Status Solidi c 8 2302-4
    • (2011) Phys. Status Solidi , vol.8 , Issue.7-8 , pp. 2302-2304
    • Terashima, W.1    Hirayama, H.2
  • 253
    • 67649523246 scopus 로고    scopus 로고
    • Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
    • 10.1063/1.3137203 0021-8979 113103
    • Bellotti E, Driscoll K, Moustakas T D and Paiella R 2009 Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors J. Appl. Phys. 105 113103
    • (2009) J. Appl. Phys. , vol.105 , Issue.11
    • Bellotti, E.1    Driscoll, K.2    Moustakas, T.D.3    Paiella, R.4
  • 255
    • 84856908507 scopus 로고    scopus 로고
    • Active layer design and power calculation of nitride-based THz quantum cascade lasers
    • 10.1117/12.914477 0277-786X 82680O
    • Chou H, Anwar M and Manzur T 2012 Active layer design and power calculation of nitride-based THz quantum cascade lasers Proc. SPIE 8268 82680O
    • (2012) Proc. SPIE , vol.8268
    • Chou, H.1    Anwar, M.2    Manzur, T.3
  • 256
    • 84890659552 scopus 로고    scopus 로고
    • Designs of GaN-based terahertz quantum cascade lasers for higher temperature operations
    • Yasuda H, Hosako I and Hirakawa K 2012 Designs of GaN-based terahertz quantum cascade lasers for higher temperature operations CLEO: Conf. on Lasers and Electro-Optics 1-2
    • (2012) CLEO: Conf. on Lasers and Electro-Optics , pp. 1-2
    • Yasuda, H.1    Hosako, I.2    Hirakawa, K.3


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