Current-voltage instabilities in GaN/AlGaN resonant tunnelling structures

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2389-2392

  Foxon, C T ^a   Novikov, S V ^a   Belyaev, A E ^b   Zhao, L X ^a   Makarovsky, O ^a   Walker, D J ^a   Eaves, L ^a   Dykeman, R I ^a   Danylyuk, S V ^c   Vitusevich, S A ^c   Kappers, M J ^d   Barnard, J S ^d   Humphreys, C J ^d  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT INSTABILITY; CURRENT VOLTAGE; DOUBLE BARRIERS; ELECTRICAL BIAS; LOW VOLTAGES; RESONANT PEAKS; RESONANT TUNNELLING STRUCTURES; ROOM TEMPERATURE;

MOLECULAR BEAM EPITAXY; NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33646433899     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303376     Document Type: Conference Paper

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