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Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature

(3) Vashaei, Z a Bayram, C a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; GAN TEMPLATE; III-NITRIDE; LATERAL EPITAXIAL OVERGROWTH; MATERIAL QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK-TO-VALLEY RATIOS; QUANTUM DEVICE; ROOM TEMPERATURE;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; ORGANIC CHEMICALS; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES; SURFACE ROUGHNESS; TEMPERATURE MEASURING INSTRUMENTS;

RESONANT TUNNELING;

EID: 77952353814 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3372763 Document Type: Article

Times cited : (46)

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