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Volumn 95, Issue 16, 2009, Pages

Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

(5) Yang, Jung Seung a Sodabanlu, Hassanet a Sugiyama, Masakazu a Nakano, Yoshiaki a,b Shimogaki, Yukihiro a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PROPERTY; BLUE SHIFT; GAN BUFFER LAYERS; INTER-DIFFUSION; INTERSUBBAND TRANSITION WAVELENGTH; INTERSUBBAND TRANSITIONS; ISB ABSORPTION; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; MULTIPLE QUANTUM WELLS; MULTIQUANTUM WELLS; PULSE INJECTION METHOD; ROOM TEMPERATURE;

ABSORPTION; CRYSTAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 70350423934 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254230 Document Type: Article

Times cited : (23)

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