Strain-induced interface instability in GaNAlN multiple quantum wells

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Nicolay, S ^a   Feltin, E ^a   Carlin, J F ^a   Grandjean, N ^a   Nevou, L ^b   Julien, F H ^b   Schmidbauer, M ^c   Remmele, T ^c   Albrecht, M ^c  

^a EPFL   (Switzerland)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; STRAIN RATE;

GANALN INTERFACE; PSEUDOMORPHICALLY STRAINED; SHORT-WAVELENGTH INTERSUBBAND TRANSITIONS (ISBTS);

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547850738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769399     Document Type: Article

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