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Volumn 97, Issue 6, 2010, Pages

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

(9) Nguyen, D T a Wuster W a Roussignol, Ph a Voisin, C a Cassabois, G a,d Tchernycheva, M b Julien, F H b Guillot, F c Monroy, E c

a ECOLE NORMALE SUPÉRIEURE (France)

b UNIVERSITÉ PARIS SACLAY (France)

c CEA GRENOBLE (France)

d UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; COHERENT SCATTERING; ELECTRON SCATTERING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOCRYSTALS; RELAXATION PROCESSES;

DIFFERENTIAL TRANSMISSION; ELECTRON-ELECTRON SCATTERING; INTRABAND TRANSITIONS; LINEWIDTH MEASUREMENTS; POPULATION RELAXATION DYNAMICS; SPECTRAL-HOLE BURNING; SQUARE-ROOT DEPENDENCE; TEMPERATURE-DEPENDENT MEASUREMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77955735378 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3476340 Document Type: Article

Times cited : (8)

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