Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

Semiconductor Science and Technology

Volumn 22, Issue 11, 2007, Pages 1240-1244

  Sherliker, Ben ^a   Halsall, Matthew ^a   Kasalynas, Irmantas ^b   Seliuta, Dalius ^b   Valusis, Gintaras ^b   Vengris, Mikas ^c   Barkauskas, Martynas ^c   Sirutkaitis, Valdas ^c   Harrison, P ^d   Jovanovic, V D ^d   Indjin, D ^d   Ikonic, Z ^d   Parbrook, P J ^e   Wang, T ^e   Buckle, P D ^f  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c VILNIUS UNIVERSITY   (Lithuania)

^d UNIVERSITY OF LEEDS   (United Kingdom)

^e Engineering and Physical Sciences Research Council UK   (United Kingdom)

^f QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; INFRARED DETECTORS; PHOTOCURRENTS; RAMAN SCATTERING; SAPPHIRE; SENSITIVITY ANALYSIS; WAVELENGTH;

INFRARED PHOTOCURRENT SPECTROSCOPY; ROOM TEMPERATURE;

ALUMINUM COMPOUNDS;

EID: 35649004458     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/11/010     Document Type: Article

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