AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

  Bayram, C ^a   Vashaei, Z ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION-FREE; DOUBLE BARRIERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK CURRENT DENSITY; PEAK-TO-VALLEY RATIOS; PROCESSING STEPS; ROOM TEMPERATURE;

GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; ORGANIC CHEMICALS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; WIND TUNNELS;

RESONANT TUNNELING DIODES;

EID: 75749106310     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294633     Document Type: Article

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