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Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

(3) Bayram, C a Vashaei, Z a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DEVICE SIZES; DOUBLE BARRIERS; GAN/SAPPHIRE; III-NITRIDE; LATERAL EPITAXIAL OVERGROWTH; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK-TO-VALLEY RATIOS; ROOM TEMPERATURE;

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GALLIUM NITRIDE; NEGATIVE RESISTANCE; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES;

RESONANT TUNNELING;

EID: 77956369910 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3484280 Document Type: Article

Times cited : (53)

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