Growth of thin AlInN/GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1505-1509

  Cywinski G ^f   Skierbiszewski, C ^f   Fedunieiwcz Zmuda, A ^f   Siekacz, M ^f   Nevou, L ^a   Doyennette, L ^a   Tchernycheva, M ^a   Julien, F H ^a   Prystawko, P ^f   Krysko M ^f   Grzanka, S ^f   Grzegory, I ^f   Presz, A ^b   Domagala J Z ^c   Smalc, J ^d   Albrecht, M ^e   Remmele, T ^e   Porowski, S ^b  

^a UNIV PARIS SUD   (France)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^f NONE

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); DOPING (ADDITIVES); GALLIUM NITRIDE; INTERMETALLICS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; TELECOMMUNICATION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CLADDING LAYERS; NOMARSKI CONTRAST; RF-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; STRAIN-COMPENSATED MQW STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33744803196     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2200382     Document Type: Article

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