Intersubband transition-based processes and devices in AlN/GaN-based heterostructures

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1234-1248

  Hofstetter, Daniel ^a   Baumann, Esther ^a   Giorgetta, Fabrizio Raphael ^a   Théron, Ricardo ^a   Wu, Hong ^b   Schaff, William J ^b   Dawlaty, Jahan ^b   George, Paul A ^b   Eastman, Lester F ^b   Rana, Farhan ^b   Kandaswamy, Prem K ^c   Guillot, Fabien ^c   Monroy, Eva ^c  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b Cornell University ^*  (United States)

^c CEA GRENOBLE   (France)

Author keywords

III nitrides; Intersubband transitions; Optical rectification; Quantum cascade detectors; Quantum wells

Indexed keywords

ALUMINUM NITRIDE; III-V SEMICONDUCTORS; LIGHT ABSORPTION; LIGHT EMISSION; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION EXPERIMENTS; FABRICATION AND CHARACTERIZATIONS; III-NITRIDE; INTERSUBBAND TRANSITIONS; OPERATION FREQUENCY; OPTICAL RECTIFICATIONS; OPTICALLY PUMPED; QUANTUM CASCADE DETECTORS;

LIGHT MODULATORS;

EID: 77955692217     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2009.2035465     Document Type: Conference Paper

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