Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Baumann, Esther ^a   Giorgetta, Fabrizio R ^a   Hofstetter, Daniel ^a   Leconte, Sylvain ^b   Guillot, Fabien ^b   Bellet Amalric, Edith ^b   Monroy, Eva ^b  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON GAS; MODULATORS; SEMICONDUCTING GALLIUM; TRANSISTORS;

ABSORPTION PEAKS; ELECTRO-OPTICAL MODULATORS; ELECTROMODULATED INTERSUBBAND (ISB); ISB TRANSITIONS;

SEMICONDUCTOR SUPERLATTICES;

EID: 33748508246     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2348759     Document Type: Article

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