Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Applied Physics Letters

Volumn 101, Issue 10, 2012, Pages

  Edmunds, C ^a   Tang, L ^a   Shao, J ^a   Li, D ^a   Cervantes, M ^a   Gardner, G ^a   Zakharov, D N ^a   Manfra, M J ^a   Malis, O ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DELTA-DOPING; INTERFACE ROUGHNESS; INTERSUBBAND ABSORPTION; LINEWIDTH DEPENDENCE; MANY-BODY EFFECT; NEAR INFRARED; NEAR-INFRARED ABSORPTION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SI-DOPING; SYSTEMATIC STUDY; THEORETICAL CALCULATIONS; TRANSITION ENERGY; WELL WIDTH;

GALLIUM NITRIDE; INFRARED DEVICES; INTERFACES (MATERIALS); SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

LINEWIDTH;

EID: 84866015782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751040     Document Type: Article

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