Comment on "AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy" [Appl. Phys. Lett. 81, 1729 (2002)]

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3626-3627

  Belyaev, A E ^a,c   Foxon, C T ^a   Novikov, S V ^a   Makarovsky, O ^a   Eaves, L ^a   Kappers, M J ^b   Humphreys, C J ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; LASER APPLICATIONS; MAGNETIC FIELD EFFECTS; MAGNETIC HYSTERESIS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

INTERSUBBAND LASERS;

TUNNEL DIODES;

EID: 0242497986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622987     Document Type: Review

References (1)

1. A. Kikuchi, R. Bannai, K. Kishino, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. 81, 1729 (2002).