High-speed mid-IR modulator using Stark shift in step quantum wells

IEEE Journal of Quantum Electronics

Volumn 37, Issue 10, 2001, Pages 1273-1282

  Holmstrom P ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Intersubband transitions; Light modulators; Mid IR; Quantum wells; Stark effect; Surface plasmons

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; INFRARED DEVICES; LIGHT ABSORPTION; LIGHT MODULATION; LIGHT MODULATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SURFACE PLASMON RESONANCE; WAVEGUIDES;

HIGH-SPEED MID-INFRARED MODULATOR; INTERSUBBAND TRANSITION; STARK EFFECT; STARK SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035474453     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.952539     Document Type: Article

References (39)

1. Quantum cascade laser
2. Quantum-well infrared photodetectors
3. Tunable infrared modulator and switch using Stark shift in step quantum wells
4. Submicron transferred-substrate heterojunction bipolar transistors
5. High-confinement waveguides for mid-IR devices
6. Comparative analysis of the intersubband versus band-to-band transitions in quantum wells
7. Collective optical excitation of interacting localized electrons
8. Collective effects in intersubband transitions
9. Pump-probe measurement of ultrafast all-optical modulation based on intersubband transition in n-doped quantum wells
10. All-optical modulation using an n-doped quantum-well structure
11. Rapid modulation of interband optical properties of quantum wells by intersubband absorption
12. Fast data coding using modulation of interband optical properties by intersubband absorption in quantum wells
13. Phonon limited intersubband lifetimes and linewidths in a two-dimensional electron gas
14. Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contribution
15. Interface roughness and alloy-disorder scattering contributions to intersubband transition linewidths
16. Quantum interference of intersubband transitions in coupled quantum wells
17. Intersubband transitions of a quasi two-dimensional electron gas in the strong disorder regime
18. Influence of rapid thermal annealing on modulation doped structures
19. Long-wavelength (λ ≈ 8-11.5 μm) semiconductor lasers with waveguides based on surface plasmons
20. Inter-sub-band absorption in GaAs/AlGaAs single quantum wells
21. Surface plasmon enhanced intersubband resonance in AlGaAs QWs
22. Band nonparabolicity effects in semiconductor quantum wells
23. Non-parabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells
24. The basic physics of intersubband transitions
25. The interface EM modes of a 'surface quantized' plasma layer on a semiconductor surface
26. Influence of collective effects on the linewidth of intersubband transitions
27. Direct observation of depolarization shift of the intersubband resonance
28. Non-parabolicity effects in a quantum-well: Sublevel shift, parallel mass, and Landau levels
29. Coupling of infrared radiation to intersubband transitions in multiple quantum wells: The effective medium approach
30. Comments on the optical constants of metals and an introduction to the data for several metals
31. Dielectric response induced by intersubband transitions in quantum wells: Transmission ellipsometry studies at the brewster angle
32. Confinement factors and gain in optical amplifiers
33. High-speed and low-driving voltage InGaAs/InAlAs multiquantum well optical modulators
34. Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers
35. Proposal of an optical modulator based on resonant tunneling and intersubband transitions
36. High-speed InGaAlAs/InAlAs multiple quantum well optical modulators