Monte Carlo modeling of phonon-assisted carrier transport in cubic and hexagonal gallium nitride

Optical and Quantum Electronics

Volumn 38, Issue 4-6, 2006, Pages 339-347

  Brazis, R ^a   Raguotis, R ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

Average energy; Band population; Drift velocity; Electron and hole mobility; GaN; p n diode; Phonons

Indexed keywords

ACOUSTIC PROPERTIES; CRYSTALS; ELECTRON TRANSITIONS; MONTE CARLO METHODS; PHONONS; SEMICONDUCTOR DIODES;

CUBIC PHASE CRYSTALS; DRIFT VELOCITY; ELECTRON AND HOLE TRANSPORT; HEXAGONAL GALLIUM NITRIDE; PHOTONICS DEVICE PERFORMANCE;

GALLIUM NITRIDE;

EID: 33646578767     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-006-0034-5     Document Type: Conference Paper

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