Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Himwas, C ^a   Songmuang, R ^a   Le Si Dang, ^a   Bleuse, J ^a   Rapenne, L ^b   Sarigiannidou, E ^b   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CARRIER CONFINEMENTS; DECAY TIME; DEEP ULTRAVIOLET; ELECTRONIC TRANSITION; FIRST EXCITED STATE; GROUND LEVEL; GROWTH AXIS; INTERNAL QUANTUM EFFICIENCY; LOW TEMPERATURES; PEAK EMISSION WAVELENGTH; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIATIVE LIFETIME; STRUCTURAL AND OPTICAL PROPERTIES; THERMALIZATION;

OPTICAL PROPERTIES; QUANTUM OPTICS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84871310028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4770075     Document Type: Article

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