Photodetectors based on intersubband transitions using III-nitride superlattice structures

Journal of Physics Condensed Matter

Volumn 21, Issue 17, 2009, Pages

  Hofstetter, Daniel ^a   Baumann, Esther ^a   Giorgetta, Fabrizio R ^a   Théron, Ricardo ^a   Wu, Hong ^b   Schaff, William J ^b   Dawlaty, Jahan ^b   George, Paul A ^b   Eastman, Lester F ^b   Rana, Farhan ^b   Kandaswamy, Prem K ^c   Leconte, Sylvain ^c   Monroy, Eva ^c  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b Phillips Hall ^*  (United States)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECTLY MODULATED SEMICONDUCTOR LASERS; HIGH-SPEED OPERATIONS; III NITRIDES; INTER-SUBBAND TRANSITIONS; NEAR INFRA REDS; RECENT PROGRESS; RESPONSIVITY; SUPER-LATTICE STRUCTURES; ULTRA-SHORT PULSE;

LASERS; NITRIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PULSED LASER APPLICATIONS; SEMICONDUCTOR MATERIALS; SOLID STATE LASERS;

SEMICONDUCTOR LASERS;

EID: 65449145116     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/17/174208     Document Type: Article

References (74)

1. Ando T, Fowler A B and Stern F 1982 Electronic properties of two-diemnsional electronic systems Rev. Mod. Phys. 54 437
2. West L C and Eglash S J 1985 First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well Appl. Phys. Lett. 46 1156
3. Levine B F, Choi K K, Bethea C G, Walker J and Malik R J 1987 New 10 νm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices Appl. Phys. Lett. 50 1092 (Pubitemid 17630084)
4. 1-xAs infrared detector with improved responsivity Appl. Phys. Lett. 50 1814
5. Liu H C, Li Jianmeng, Brown E R, McIntosh K A, Nichols K B and Manfra M J 1995 Quantum well intersubband heterodyne infrared detection up to 82 GHz Appl. Phys. Lett. 67 1594
6. Faist J, Capasso F, Sivco D L, Sirtori C, Hutchinson A L and Cho A Y 1994 Quantum cascade laser Science 264 553-6 (Pubitemid 24186835)
7. Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U, Ilegems M, Gini E and Melchior H 2002 Continuous wave operation of a mid-infrared semiconductor laser at room temperature Science 295 301-5 (Pubitemid 34074354)
8. Bai Y, Darvish S R, Slivken S, Zhang W, Evans A, Nguyen J and Razeghi M 2008 Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power Appl. Phys. Lett. 92 101105
9. Rochat M, Ajili L, Willenberg H, Faist J, Beere H, Davies G, Linfield E and Ritchie D 2002 Low-threshold terahertz quantum-cascade lasers Appl. Phys. Lett. 81 1381
10. Walther C, Fischer M, Scalari G, Terazzi R, Hoyler N and Faist J 2007 Quantum cascade lasers operating from 1.2 to 1.6 THz Appl. Phys. Lett. 91 131122 (Pubitemid 47502549)
11. Gopal A V, Yoshida H, Neogi A, Georgiev N, Mozume T, Simoyama T, Wada O and Ishikawa H 2002 Intersubband absorption saturation in InGaAs-AlAsSb quantum wells IEEE J. Quantum Electron. 38 1515 (Pubitemid 35372543)
12. Akimoto R, Li B S, Akita K and Hasama T 2005 Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum-well waveguides at telecommunication wavelength Appl. Phys. Lett. 87 181104
13. Ma B S et al 2007 GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 νm Appl. Phys. Lett. 91 051102 (Pubitemid 47210752)
14. Gmachl C, Ng H M, Chu S N G and Cho A Y 2000 Intersubband absorption at λ∼1.55νm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers Appl. Phys. Lett. 77 3722
15. 1-xN coupled double quantum wells Appl. Phys. Lett. 79 1590 (Pubitemid 33598472)
16. Kishino K, Kikuchi A, Kanazava H and Tachibana T 2002 Intersubband transition in (GaN)(m)/(AlN)(n) superlattices in the wavelength range from 1.08 to 1.61 νm Appl. Phys. Lett. 81 1234
17. Helman A et al 2003 Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy Appl. Phys. Lett. 83 5196
18. Suzuki N and Iizuka N 1999 Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells Japan. J. Appl. Phys. 38 L363
19. Nicolay S, Carlin J F, Feltin E, Butte R, Mosca M, Grandjean N, Ilegems M, Tchernycheva M, Nevou L and Julien F H 2005 Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells Appl. Phys. Lett. 87 111106
20. Tchernycheva M, Nevou L, Doyennette L, Julien F H, Warde E, Guillot F, Monroy E, Bellet-Amalric E, Remmele T and Albrecht M 2006 Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells Phys. Rev. B 73 125347
21. Cywiński G et al 2006 Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths J. Vac. Sci. Technol. B 24 1505
22. Martin G, Strite S, Botchkarev A, Agarwal A, Rockett A, Lambrecht W R L, Segall B and Morkoç H 1995 Valence band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy J. Electron. Mater. 225 24
23. Wei S and Zunger A 1996 Valence band splittings and band offsets of AlN, GaN, and InN Appl. Phys. Lett. 69 2719 (Pubitemid 126592924)
24. Martin G, Botchkarev A, Rockett A and Morkoç H 1996 Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy Appl. Phys. Lett. 68 2541 (Pubitemid 126683969)
25. Iizuka N, Kaneko K, Suzuki N, Asano T, Noda S and Wada O 2000 Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells Appl. Phys. Lett. 77 648
26. Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Hwang J, Schaff W J and Eastman L F 2004 Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors Semicond. Sci. Technol. 19 S463-4
27. Gmachl C, Ng H M and Cho A Y 2000 Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 νm Appl. Phys. Lett. 77 334
28. Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Baumann E, Giorgetta F R, Wu H, Schaff W J and Eastman L F 2006 Ultra-fast hole-burning in intersubband absorption lines of GaN/AlN superlattices Appl. Phys. Lett. 89 151103 (Pubitemid 44570502)
29. Heber J D, Gmachl C, Ng H M and Cho A Y 2002 Comparative study of ultrafast intersubband electron scattering times at ∼1.55 νm wavelength in GaN/AlGaN heterostructures Appl. Phys. Lett. 81 1237
30. Asano T, Yoshizawa S, Noda S, Iizuka N, Kaneko K, Suzuki N and Wada O 2001 Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells Opt. Quantum Electron. 33 963-73
31. Hofstetter D, Faist J and Bour D P 2000 Mid-infrared emission from InGaN/GaN-based light emitting diodes Appl. Phys. Lett. 76 1495-7
32. Tchernycheva M, Nevou L, Doyennette L, Helman A, Colombelli R, Julien F H, Guillot F, Monroy E, Shibata T and Tanaka M 2005 Intraband absorption of doped GaN/AlN quantum dots at telecommunication wavelengths Appl. Phys. Lett. 87 101912
33. Hofstetter D, Schad S-S, Wu H, Schaff W J and Eastman L F 2003 GaN/AlN-based quantum well infrared photodetector for 1.55 νm Appl. Phys. Lett. 83 572-4
34. Lupu A et al 2008 Lattice-matched GaN/InAlN waveguides at 1.55 νm grown by metalorganic vapor phase epitaxy IEEE Photon. Technol. Lett. 20 102-4
35. Vardi A, Akopian N, Bahir G, Doyennette L, Tchernycheva M, Nevou L, Julien F H, Guillot F and Monroy E 2006 Room temperature demonstration of GaN/AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength Appl. Phys. Lett. 88 143101 (Pubitemid 43731508)
36. Baumann E, Giorgetta F R, Hofstetter D, Wu H, Schaff W J, Eastman L F and Kirste L 2005 Tunnelling effects and intersubband absorption in AlN/GaN superlattices Appl. Phys. Lett. 86 032110-2
37. Wang Z, Reimann K, Woerner M, Elsaesser T, Hofstetter D, Hwang J, Schaff W J and Eastman L F 2005 Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductors Phys. Rev. Lett. 94 037403-6
38. Baumann E, Giorgetta F R, Hofstetter D, Guillot F, Bellet-Amalric E and Monroy E 2006 Tunable electro-modulated intersubband absorption of a GaN/AlN superlattice grown on a transistor-like structure Appl. Phys. Lett. 89 101121
39. Baumann E, Giorgetta F R, Hofstetter D, Guillot F, Leconte S, Bellet-Amalric E and Monroy E 2007 GaN/AlN electro-optical modulator prototype at telecommunication wavelengths Phys. Status Solidi c 4 1621-4
40. Baumann E, Giorgetta F R, Hofstetter D, Golka S, Schrenk W, Strasser G, Kirste L, Nicolay S, Feltin E and Grandjean N 2006 1.5 νm absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 89 041106
41. Baumann E, Giorgetta F R, Hofstetter D, Lu H, Chen X, Schaff W J, Eastman L F, Golka S, Schrenk W and Strasser G 2005 Intersubband photoconductivity at 1.6 νm using a strain-compensated AlN/GaN superlattice Appl. Phys. Lett. 87 191102-4
42. Nevou L, Tchernycheva M, Julien F H, Guillot F and Monroy E 2007 Appl. Phys. Lett. 90 121106
43. Hofstetter D, Baumann E, Giorgetta F R, Graf M, Maier M, Guillot F, Bellet-Amalric E and Monroy E 2006 High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 νm photovoltaic intersubband detectors Appl. Phys. Lett. 88 121112
44. Giorgetta F R, Baumann E, Guillot F, Monroy E and Hofstetter D 2007 High frequency (f = 2.37 GHz) room temperature operation of 1.55 νm AlN/GaN-based intersubband detector Electron. Lett. 43 185-7 (Pubitemid 46739405)
45. Hofstetter D, Baumann E, Giorgetta F R, Guillot F, Leconte S and Monroy E 2007 Optically non-linear effects in intersubband transitions of GaN/AlN-based superlattices Appl. Phys. Lett. 91 131115 (Pubitemid 47502542)
46. Kheirodin N et al 2008 Electrooptical modulator at telecommunication wavelengths based on GaN-AIN coupled quantum wells IEEE Photon. Technol. Lett. 20 724-6
47. Suzuki N 2003 Simulation of ultrafast cross-gain modulation in optically-pumped GaN/AlN intersubband optical amplifiers Japan. J. Appl. Phys. 42 5607-12
48. Iizuka N, Kaneko K and Suzuki N 2000 Sub-picosecond all-optical gate utilizing aN intersubband transition Opt. Express 13 3835-40
49. Iizuka N, Kaneko K and Suzuki N 2002 Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy Appl. Phys. Lett. 81 1803
50. Iizuka N, Kaneko K and Suzuki N 2004 Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AIN quantum wells Electron. Lett. 40 962
51. Iizuka N, Kaneko K and Suzuki N 2006 Polarization dependent loss in III-nitride optical waveguides for telecommunication devices J. Appl. Phys. 99 093107 (Pubitemid 43781911)
52. Li Y, Bhattacharyya A, Thomidis C, Moustakas T D and Paiella R 2007 Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides Opt. Express 15 17922
53. Tyagai V A, Evstigneev A M, Krasiko A N, Andreeva A F and Malakhov V Y 1977 Optical properties of indium nitride films Sov. Phys.-Semicond. 11 1257 (Pubitemid 8612441)
54. Wu J, Walukiewicz W, Yu K M, Ager J W III, Haller E E, Lu H, Schaff W J, Saito Y and Nanishi Y 2001 Unusual properties of the fundamental bandgap of InN Appl. Phys. Lett. 80 3967
55. Ambacher O et al 1999 Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures J. Appl. Phys. 85 3222 (Pubitemid 129645742)
56. Dimitrov R, Murphy M, Smart J, Schaff W J, Shealy J R, Eastman L F, Ambacher O and Stutzmann M 2000 Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire J. Appl. Phys. 87 3375
57. Foisy M C 1990 A physical model for the bias dependence of the modulation-doped field-effect transistor's high frequency performance PhD Thesis Cornell University
58. Foisy M C, Tasker P J, Hughes B and Eastman L F 1988 The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET IEEE Trans. Electron Devices 35 871-8 (Pubitemid 18665720)
59. Sirtori C, Capasso F, Faist J and Scandolo S 1994 Nonparabolicity and a sum rule associated with bound-to-bound and bound-to-continuum intersubband transitions in quantum wells Phys. Rev. B 50 8663-74
60. Ambacher O et al 2002 Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures J. Phys.: Condens. Matter 34 3399-434 (Pubitemid 34404598)
61. Bernardini F, Fiorentini V and Vanderbilt D 2002 Spontaneous polarization and piezoelectric constants of III-V nitrides Phys. Rev. B 56 10024-7
62. Monroy E, Andreev T, Holliger P, Bellet-Amalric E, Shibata T, Tanaka M and Daudin B 2004 Modification of GaN(0001) growth kinetics by Mg-doping Appl. Phys. Lett. 84 2554
63. Rosa A L, Neugebauer J, Northrup J E, Lee C-D and Feenstra R M 2002 Adsorption and incorporation of Si at GaN(0001) surfaces Appl. Phys. Lett. 80 2008 (Pubitemid 34326269)
64. 1-xN (x = 0.11, 0.25) multi-quantum-well structures J. Appl. Phys. 99 093513 (Pubitemid 43786131)
65. Monroy E, Daudin B, Bellet-Amalric E, Gogneau N, Jalabert D, Enjalbert F, Brault J, Barjon J and Dang Le Si 2003 Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy J. Appl. Phys. 93 1550
66. Tchernycheva M, Nevou L, Doyennette L, Collombelli R, Julien F H, Guillot F, Monroy E, Bellet-Amalric E, Remmele T and Albrecht M 2006 Phys. Rev. B 73 125347
67. Rosencher E, Bois Ph, Vinter B, Nagle J and Kaplan D 1990 Appl. Phys. Lett. 56 1822
68. Rosencher E and Bois Ph 1991 Phys. Rev. B 44 11315
69. Hofstetter D, Baumann E, Giorgetta F R, Dawlaty J, George P A, Rana F, Guillot F and Monroy E 2008 High frequency measurements on an AlN/GaN-based intersubband detector at 1550 and 780 nm Appl. Phys. Lett. 92 231104
70. Graf M, Scalari G, Hofstetter D, Faist J, Beere H, Davies G, Linfield E and Ritchie D 2004 AlGaAs-based THz range quantum well infrared photodetector at 87 νm Appl. Phys. Lett. 84 475-7
71. Hofstetter D, Graf M, Aellen T, Faist J, Hvozdara L and Blaser S 2006 23 GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35 νm Appl. Phys. Lett. 89 061119 (Pubitemid 44222902)
72. Vardi A, Bahir G, Guillot F, Bougerol C, Monroy E, Schacham S E, Tchernycheva M and Julien F H 2008 Near-infared quantum cascade detector in GaN/AlGaN/AlN heterostructures Appl. Phys. Lett. 92 011112
73. Vardi A, Akopian N, Bahir G, Doyennette L, Tchernycheva M, Nevou L, Julien F H, Guillot F and Monroy E 2006 Room temperature demonstration of GaN/AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength Appl. Phys. Lett. 88 143101 (Pubitemid 43731508)
74. Hofstetter D, Theron R, Baumann E, Giorgetta F R, Golka S, Strasser G, Guillot F and Monroy E 2008 Monolithically integrated AlGaN/GaN/AlN-based solar-blind ultraviolet and near-infrared detectors Electron. Lett. 44 986-8