Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 306-312

  Guillot, F ^a   Amstatt, B ^a   Bellet Amalric, E ^a   Monroy, E ^a   Nevou, L ^b   Doyennette, L ^b   Julien, F H ^b   Dang, Le Si ^c  

^a UNIV GRENOBLE ALPES   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c CNRS   (France)

Author keywords

GaN; Intersubband; Molecular beam epitaxy; QWIP; Superlattices

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; INTERSUBBAND (ISB) ABSORPTION; MONOLAYER FLUCTUATIONS; QWIP;

DOPING (ADDITIVES);

EID: 33845334213     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.020     Document Type: Article

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