Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures

Journal of Applied Physics

Volumn 93, Issue 12, 2003, Pages 10140-10142

  Zhou, Qiaoying ^a   Chen, Jiayu ^a   Pattada, B ^a   Manasreh, M O ^a   Xiu, Faxian ^b   Puntigan, Steve ^b   He, L ^b   Ramaiah, K S ^b   Morkoç, Hadis ^b  

^a 3202 Bell Engineering Center   (United States)

^b Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; GROWTH (MATERIALS); INTERFACES (MATERIALS); LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

INTERSUBBAND TRANSITIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038142794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577809     Document Type: Article

References (23)

1. H. Morkoç, Nitride Semiconductors and Devices (Springer-Verlag, Heidelberg, 1999).
2. S. N. Muhammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996).
3. S. J. Pearton, J. C. Zolper, R. J. Shul, and T. Ren, J. Appl. Phys. 86, 1 (1999).
4. N. Suzuki and N. Iizuka, Jpn. J. Appl. Phys., Part 2 38, L363 (1999).
5. C. Gmachl, H. M. Ng, and A. Y. Cho, Appl. Phys. Lett. 77, 334 (2000).
6. C. Gmachl, H. M. Ng, S.-N. George Chu, and A. Y. Cho, Appl. Phys. Lett. 77, 3722 (2000).
7. K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, Appl. Phys. Lett 81, 1234(2002).
8. N. Iizuka, K. Kaneko, and N. Suzuki, Appl. Phys. Lett. 81, 1803 (2002).
9. N. Suzuki and N. Iizuka, Jpn. J. Appl. Phys., Part 2 36, L1008 (1999).
10. N. Suzuki and N. Iizuka, Jpn. J. Appl. Phys., Part 2 37, L369 (1998).
11. N. Suzuki and N. Iizuka, Proc. SPIE 3283, 614 (1998).
12. T. Asano, K. Tomoda, and S. Noda, in 'Extended Abstracts of the 25th International Symposium on Compound Semiconductors, 1998.
13. M. O. Manasreh, J. M. Baranowski, K. Pakula, H. X. Jiang, and Jingyu Lin, Appl. Phys. Lett. 75, 659 (1999).
14. B. Dupont, M. Gao, H. C. Liu, Z. R. Wasilewski, A. Shen, M. Zaluzny, S. R. Schmidt, and A. Seilmeier, Phys. Rev. B 61, 13 050 (2000).
15. M. Zaluzny and C. Nalewajko, Phys. Rev. B 59, 13 043 (1999).
16. B. Pattada, Jiayu Chen, M. O. Manasreh, M. Hussien, W. Ma, and G. J. Salamo, Appl. Phys. Lett. 82, 2509 (2003).
17. L. C. West, S. J. Eglash, Appl. Phys. Lett. 46, 1156 (1985).
18. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10 024 (1997).
19. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
20. E. T. Yu, in III-V Nitride Semiconductors: Applications and Devices, Vol. 19, edited by E. T. Yu and M. O. Manasreh (Taylor and Francis, New York, 2003), Chap. 4, pp. 161-191.
21. H. Morkoç, R. Cingolani, and Bernard Gil, Innovations Mater. Res. 3, 97 (1999).
22. H. Morkoç, A. Di Carlo, and R. Cingolani, Solid-State Electron. 46, 157 (2002).
23. E. R. Brown, S. J. English, and K. A. McIntosh, in Long Wavelength Infrared Detectors, Vol. 1, edited by M. Razeghi (Gordon and Breach, Amsterdam, 1996), Chap. 6, p. 335.