Response to "Comment on 'AIN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy'" [Appl. Phys. Lett. 83, 3626 (2003)]

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3628-

  Kikuchi, Akihiko ^a   Bannai, Ryo ^a   Kishino, Katsumi ^a   Lee, Chia Ming ^b   Chyi, Jen Inn ^b  

^a SOPHIA UNIVERSITY   (Japan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRAPS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; RESONANT TUNNELING;

HETEROBARRIERS; INTERMEDIATE LAYERS;

TUNNEL DIODES;

EID: 0345023548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622988     Document Type: Review

References (8)

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2. A. Kikuchi, R. Bannai, and K. Kishino, Phys. Status Solidi A 188, 187 (2001).
3. K. M. Indlekofer, E. Dona, J. Malindretos, M. Bertelli, M. Kocan, A. Rizzi, and H. Luth, Phys. Status Solidi B 234, 769 (2002).
4. A. E. Belyaev, C. T. Foxon, S. V. Novikov, O. Makarovsky, L. Eaves, M. J. Kappers, and C. J. Humphreys, Appl. Phys. Lett. 83, 3626 (2003), preceding paper.
5. A. Kikuchi, T. Yamada, S. Nakamura, K. Kusakabe, D. Sugihara, and K. Kishino, Mater. Sci. Eng., B 82, 12 (2001).
6. K. Kishino and A. Kikuchi, Phys. Status Solidi A 190, 23 (2002).
7. S. Watanabe, M. Maeda, K. Tsutsui, Ext. Abs. 50th Spring Meeting; Jpn. Soc. Appl. Phys. and Related Soc. 29a-ZE-2, 2002.
8. M. Matsuda, T. Kanazawa, M. Watanabe, and M. Asada, Ext. Abs. 50th Spring Meeting; Jpn. Soc. Appl. Phys. and Related Soc. 29a-ZE-5, 2002.