Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3μ m

Electronics Letters

Volumn 42, Issue 22, 2006, Pages 1308-1309

  Nevou, L ^a   Julien, F H ^a   Colombelli, R ^a   Guillot, F ^b   Monroy, E ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; OPTICAL PUMPING;

INTERSUBBAND DEVICE; INTERSUBBAND EMISSION; PEAK EMISSION WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33750537064     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062282     Document Type: Article

References (4)

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2. Gauthier-Lafaye, O., Seguin-Roa, B., Julien, F.H., Collot, P., Sirtori, C., Duboz, J.Y., and Strasser, G.: ' High-power tunable quantum fountain unipolar lasers ', Physica E, 2000, 7, p. 12-19 10.1016/S1386-9477(99)00296-9 1386-9477
3. Tchernycheva, M., Nevou, L., Doyennette, L., Julien, F.H., Warde, E., Guillot, F., Monroy, E., Bellet-Amalric, E., Remmele, T., and Albrecht, M.: ' Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells ', Phys. Rev. B, 2006, 73, p. 125347-11, and references therein 10.1103/PhysRevB.73.125347
4. Heber, J.D., Gmachl, C., Ng, H.M., and Cho, A.Y.: ' Comparative study of ultrafast intersubband electron scattering times at similar to 1.55m wavelength in GaN/AlGaN heterostructures ', Appl. Phys. Lett., 2002, 81, p. 1237-1239 10.1063/1.1500412 0003-6951