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Volumn 95, Issue 3, 2004, Pages 1127-1133

Plastic strain relaxation of nitride heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 1142304510     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637934     Document Type: Article
Times cited : (70)

References (34)
  • 5
    • 0038940618 scopus 로고
    • edited by F. R. N. Nabarro (Elesevier, Amsterdam)
    • W. A. Jesser and J. H. van der Merwe, in Dislocations in Solids, edited by F. R. N. Nabarro (Elesevier, Amsterdam, 1989), Vol. 8, p. 423.
    • (1989) Dislocations in Solids , vol.8 , pp. 423
    • Jesser, W.A.1    Van Der Merwe, J.H.2
  • 23
    • 1142304186 scopus 로고    scopus 로고
    • note
    • The simulation profiles present oscillations that correspond to thickness fringes. For comparison and clarity we have chosen to smooth the simulation profile by removing Fourier components with frequencies higher than 1/mδθ, where m is the number of data points considered (the number of points of one oscillation) and δθ is the angular step of the scan.
  • 28
    • 1142304178 scopus 로고    scopus 로고
    • (personal communication)
    • N. Herres (personal communication).
    • Herres, N.1
  • 30
    • 1142267823 scopus 로고    scopus 로고
    • edited by B. Gil (Oxford University Press, New York), Chap. 4
    • F.A. Ponce, in Group III Nitride Semiconductor Compounds, edited by B. Gil (Oxford University Press, New York, 1998), Chap. 4, p. 127.
    • (1998) Group III Nitride Semiconductor Compounds , pp. 127
    • Ponce, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.