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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
HIGH RESOLUTION X RAY DIFFRACTION;
III-NITRIDE SEMICONDUCTORS;
INALGAN;
POPULATION INVERSIONS;
PROMISING MATERIALS;
QUANTUM CASCADE STRUCTURES;
RADIO FREQUENCIES;
RATE-EQUATION MODELS;
RESONANT PHONON;
SATELLITE PEAKS;
SHARP INTERFACE;
TERA HERTZ;
TERAHERTZ QUANTUM-CASCADE LASERS;
FABRICATION;
GALLIUM NITRIDE;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
QUANTUM CASCADE LASERS;
SEMICONDUCTOR LASERS;
X RAY DIFFRACTION;
STRUCTURAL DESIGN;
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EID: 78649369577
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880772 Document Type: Article |
Times cited : (35)
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References (11)
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