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Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 24, 2011, Pages

Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures

(3) Berland, Kristian a Andersson, Thorvald G a Hyldgaard, Per a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84855426678 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.84.245313 Document Type: Article

Times cited : (18)

References (48)

1
- 73549086993
- NJOPFM 1367-2630 10.1088/1367-2630/11/12/125012
- M. C. Amann, F. Capasso, A. Larsson, and M. Pessa, New. J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/11/12/125012 11, 125012 (2009).
- (2009) New. J. Phys. , vol.11 , pp. 125012
- Amann, M.C.¹ Capasso, F.² Larsson, A.³ Pessa, M.⁴

2
- 73549124578
- NJOPFM 1367-2630 10.1088/1367-2630/11/12/125023
- H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, New. J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/11/12/125023 11, 125023 (2009).
- (2009) New. J. Phys. , vol.11 , pp. 125023
- MacHhadani, H.¹ Kandaswamy, P.² Sakr, S.³ Vardi, A.⁴ Wirtmüller, A.⁵ Nevou, L.⁶ Guillot, F.⁷ Pozzovivo, G.⁸ Tchernycheva, M.⁹ Lupu, A.¹⁰

3
- 78651091808
- JCRGAE 0022-0248 10.1016/j.jcrysgro.2010.10.034
- J.-S. Yang, H. Sodabanlu, M. Sugiyama, Y. Nakano, and Y. Shimogaki, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2010.10.034 314, 252 (2011).
- (2011) J. Cryst. Growth , vol.314 , pp. 252
- Yang, J.-S.¹ Sodabanlu, H.² Sugiyama, M.³ Nakano, Y.⁴ Shimogaki, Y.⁵

4
- 33645468757
- Systematic experimental and theoretical investigation of intersubband absorption in GaNâ AlN quantum wells
- DOI 10.1103/PhysRevB.73.125347, 125347
- M. Tchernycheva, L. Nevou, L. Doyennette, F. H. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele, and M. Albrecht, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.73.125347 73, 125347 (2006). (Pubitemid 43494350)
- (2006) Physical Review B - Condensed Matter and Materials Physics , vol.73 , Issue.12 , pp. 1-11
- Tchernycheva, M.¹ Nevou, L.² Doyennette, L.³ Julien, F.H.⁴ Warde, E.⁵ Guillot, F.⁶ Monroy, E.⁷ Bellet-Amalric, E.⁸ Remmele, T.⁹ Albrecht, M.¹⁰

5
- 11144223546
- Designs for λ= 1.55 μm GaN-based intersubband laser active region
- DOI 10.1143/JJAP.43.7444
- V. D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, and R. A. Soref, Jpn. J. Appl. Phys. JAPLD8 0021-4922 10.1143/JJAP.43.7444 43, 7444 (2004). (Pubitemid 40049859)
- (2004) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.43 , Issue.A , pp. 7444-7447
- Jovanovic, V.D.¹ Ikonic, Z.² Indjin, D.³ Harrison, P.⁴ Soref, R.A.⁵

6
- 79956051819
- n superlattices in the wavelength range from 1.08 to 1.61 μm
- DOI 10.1063/1.1500432
- K. Kishino, A. Kikuchi, H. Kanazawa, and T. Tachibana, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1500432 pp. 1234 (2002). (Pubitemid 34963814)
- (2002) Applied Physics Letters , vol.81 , Issue.7 , pp. 1234
- Kishino, K.¹ Kikuchi, A.² Kanazawa, H.³ Tachibana, T.⁴

7
- 62549106633
- JAPIAU 0021-8979 10.1063/1.3091280
- L. B. Cen, B. Shen, Z. X. Qin, and G. Y. Zhang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3091280 105, 053106 (2009).
- (2009) J. Appl. Phys. , vol.105 , pp. 053106
- Cen, L.B.¹ Shen, B.² Qin, Z.X.³ Zhang, G.Y.⁴

8
- 31544451823
- Design and preparation of AlN/GaN quantum wells for quantum cascade laser applications
- DOI 10.1143/JJAP.44.5918
- A. Ishida, K. Matsue, Y. Inoue, H. Fujiyasu, H.-J. Ko, A. Setiawan, J.-J. Kim, H. Makino, and T. Yao, Jpn. J. Appl. Phys. JAPLD8 0021-4922 10.1143/JJAP.44.5918 44, 5918 (2005). (Pubitemid 43160706)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.8 , pp. 5918-5922
- Ishida, A.¹ Matsue, K.² Inoue, Y.³ Fujiyasu, H.⁴ Ko, H.-J.⁵ Setiawan, A.⁶ Kim, J.-J.⁷ Makino, H.⁸ Yao, T.⁹

9
- 20944441391
- Optically pumped terahertz laser based on intersubband transitions in a GaNAlGaN double quantum well
- DOI 10.1063/1.1900929, 103106
- N. Vukmirović, V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison, and V. Milanović, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1900929 97, 103106 (2005). (Pubitemid 40866023)
- (2005) Journal of Applied Physics , vol.97 , Issue.10 , pp. 1-5
- Vukmirovic, N.¹ Jovanovic, V.D.² Indjin, D.³ Ikonic, Z.⁴ Harrison, P.⁵ Milanovic, V.⁶

10
- 78649369577
- JAPIAU 1610-1634 10.1002/pssc.200880772
- W. Terashima and H. Hirayama, Phys. Status Solidi C JAPIAU 1610-1634 10.1002/pssc.200880772 6, S615 (2009).
- (2009) Phys. Status Solidi C , vol.6 , pp. 615
- Terashima, W.¹ Hirayama, H.²

11
- 79960717279
- JAPIAU 1610-1634 10.1002/pssc.201000987
- M. Stattin, K. Berland, P. Hyldgaard, A. Larsson, and T. G. Andersson, Phys. Status Solidi C JAPIAU 1610-1634 10.1002/pssc.201000987 8, 2357 (2011).
- (2011) Phys. Status Solidi C , vol.8 , pp. 2357
- Stattin, M.¹ Berland, K.² Hyldgaard, P.³ Larsson, A.⁴ Andersson, T.G.⁵

12
- 0001689993
- PRBMDO 1098-0121 10.1103/PhysRevB.57.R9427
- F. Bernardini and V. Fiorentini, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.57.R9427 57, R9427 (1998).
- (1998) Phys. Rev. B , vol.57 , pp. 9427
- Bernardini, F.¹ Fiorentini, V.²

13
- 0001269399
- PRBMDO 1098-0121 10.1103/PhysRevB.60.8849
- V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.60.8849 60, 8849 (1999).
- (1999) Phys. Rev. B , vol.60 , pp. 8849
- Fiorentini, V.¹ Bernardini, F.² Della Sala, F.³ Di Carlo, A.⁴ Lugli, P.⁵

14
- 78650295873
- JAPIAU 0021-8979 10.1063/1.3511334
- F. Sudradjat, W. Zhang, K. Driscoll, Y. Liao, A. Bhattacharyya, C. Thomidis, L. Zhou, D. J. Smith, T. D. Moustakas, and R. Paiella, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3511334 108, 103704 (2010).
- (2010) J. Appl. Phys. , vol.108 , pp. 103704
- Sudradjat, F.¹ Zhang, W.² Driscoll, K.³ Liao, Y.⁴ Bhattacharyya, A.⁵ Thomidis, C.⁶ Zhou, L.⁷ Smith, D.J.⁸ Moustakas, T.D.⁹ Paiella, R.¹⁰

15
- 3242717694
- JAPIAU 1610-1634 10.1002/pssc.200404771
- M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, and M. Eickhoff, Phys. Status Solidi C JAPIAU 1610-1634 10.1002/pssc.200404771 1, 2210 (2004).
- (2004) Phys. Status Solidi C , vol.1 , pp. 2210
- Hermann, M.¹ Monroy, E.² Helman, A.³ Baur, B.⁴ Albrecht, M.⁵ Daudin, B.⁶ Ambacher, O.⁷ Stutzmann, M.⁸ Eickhoff, M.⁹

16
- 77955760668
- APPLAB 0003-6951 10.1063/1.3456528
- K. Berland, M. Stattin, R. Farivar, D. M. S. Sultan, P. Hyldgaard, A. Larsson, S. M. Wang, and T. G. Andersson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3456528 97, 043507 (2010).
- (2010) Appl. Phys. Lett. , vol.97 , pp. 043507
- Berland, K.¹ Stattin, M.² Farivar, R.³ Sultan, D.M.S.⁴ Hyldgaard, P.⁵ Larsson, A.⁶ Wang, S.M.⁷ Andersson, T.G.⁸

17
- 77954578582
- PSSBBD 0370-1972 10.1002/pssb.200983694
- M. Tchernycheva, L. Nevou, L. Vivien, F. H. Julien, P. K. Kandaswamy, E. Monroy, A. Vardi, and G. Bahir, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200983694 247, 1622 (2010).
- (2010) Phys. Status Solidi B , vol.247 , pp. 1622
- Tchernycheva, M.¹ Nevou, L.² Vivien, L.³ Julien, F.H.⁴ Kandaswamy, P.K.⁵ Monroy, E.⁶ Vardi, A.⁷ Bahir, G.⁸

18
- 79956003733
- AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
- DOI 10.1063/1.1501157
- A. Kikuchi, R. Bannai, K. Kishino, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1501157 81, 1729 (2002). (Pubitemid 35037800)
- (2002) Applied Physics Letters , vol.81 , Issue.9 , pp. 1729
- Kikuchi, A.¹ Bannai, R.² Kishino, K.³ Lee, C.-M.⁴ Chyi, J.-I.⁵

19
- 12144289733
- PELNFM 1386-9477 10.1016/j.physe.2003.11.119
- A. E. Belyaev, O. Makarovsky, D. J. Walker, L. Eaves, C. T. Foxon, S. V. Novikov, L. X. Zhao, R. I. Dykeman, S. V. Danylyuk, S. A. Vitusevich, Physica. E PELNFM 1386-9477 10.1016/j.physe.2003.11.119 21, 752 (2004).
- (2004) Physica. e , vol.21 , pp. 752
- Belyaev, A.E.¹ Makarovsky, O.² Walker, D.J.³ Eaves, L.⁴ Foxon, C.T.⁵ Novikov, S.V.⁶ Zhao, L.X.⁷ Dykeman, R.I.⁸ Danylyuk, S.V.⁹ Vitusevich, S.A.¹⁰

20
- 33646400859
- APPLAB 0003-6951 10.1063/1.2199445
- S. Golka, C. Pflügl, W. Schrenk, G. Strasser, C. Skierbiszewski, M. Siekacz, I. Grzegory, and S. Porowski, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2199445 88, 172106 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 172106
- Golka, S.¹ Pflügl, C.² Schrenk, W.³ Strasser, G.⁴ Skierbiszewski, C.⁵ Siekacz, M.⁶ Grzegory, I.⁷ Porowski, S.⁸

21
- 78649307670
- APPLAB 0003-6951 10.1063/1.3515418
- C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3515418 97, 181109 (2010).
- (2010) Appl. Phys. Lett. , vol.97 , pp. 181109
- Bayram, C.¹ Vashaei, Z.² Razeghi, M.³

22
- 75749106310
- APPLAB 0003-6951 10.1063/1.3294633
- C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3294633 96, 042103 (2010).
- (2010) Appl. Phys. Lett. , vol.96 , pp. 042103
- Bayram, C.¹ Vashaei, Z.² Razeghi, M.³

23
- 77952353814
- JAPIAU 0021-8979 10.1063/1.3372763
- Z. Vashaei, C. Bayram, and M. Razeghi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3372763 107, 083505 (2010).
- (2010) J. Appl. Phys. , vol.107 , pp. 083505
- Vashaei, Z.¹ Bayram, C.² Razeghi, M.³

24
- 0037445012
- JAPIAU 0021-8979 10.1063/1.1556177
- V. D. Jovanović, Z. Ikonić, D. Indjin, P. Harrison, V. Milanović, and R. A. Soref, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1556177 93, 3194 (2003).
- (2003) J. Appl. Phys. , vol.93 , pp. 3194
- Jovanović, V.D.¹ Ikonić, Z.² Indjin, D.³ Harrison, P.⁴ Milanović, V.⁵ Soref, R.A.⁶

25
- 0001698357
- APPLAB 0003-6951 10.1063/1.112524
- J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, C. Sirtori, S. N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.112524 65, 2901 (1994).
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2901
- Faist, J.¹ Capasso, F.² Sivco, D.L.³ Hutchinson, A.L.⁴ Sirtori, C.⁵ Chu, S.N.G.⁶ Cho, A.Y.⁷

26
- 84860110539
- in Weinheim-VCH Verlag Gmbh & Co. KGaA, Weinheim
- S. Gunna, F. Bertazzi, R. Paiella, and E. Bellotti, in Nitride Semiconductor Devices: Principles and Simulation (Weinheim-VCH Verlag Gmbh & Co. KGaA, Weinheim, 2007).
- (2007) Nitride Semiconductor Devices: Principles and Simulation
- Gunna, S.¹ Bertazzi, F.² Paiella, R.³ Bellotti, E.⁴

27
- 34247278251
- Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
- DOI 10.1088/0268-1242/22/2/018, PII S0268124207346750, 018
- S. Leconte, F. Guillot, E. Sarigiannidou, and E. Monroy, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/22/2/018 22, 107 (2007). (Pubitemid 46620838)
- (2007) Semiconductor Science and Technology , vol.22 , Issue.2 , pp. 107-112
- Leconte, S.¹ Guillot, F.² Sarigiannidou, E.³ Monroy, E.⁴

28
- 80052848692
- SUMIEK 0749-6036 10.1016/j.spmi.2011.08.003
- K. Berland, Superlattices Microstruct. SUMIEK 0749-6036 10.1016/j.spmi.2011.08.003 50, 411 (2011).
- (2011) Superlattices Microstruct. , vol.50 , pp. 411
- Berland, K.¹

29
- 0035839918
- APPLAB 0003-6951 10.1063/1.1403277
- C. Gmachl, H. M. Ng, and A. Y. Cho, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1403277 79, 1590 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1590
- Gmachl, C.¹ Ng, H.M.² Cho, A.Y.³

30
- 34547784042
- PSSBBD 0370-1972 10.1002/pssb.200675606
- X. Y. Liu, P. Holmström, P. Jänes, L. Thylén, and T. G. Andersson, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200675606 244, 2892 (2007).
- (2007) Phys. Status Solidi B , vol.244 , pp. 2892
- Liu, X.Y.¹ Holmström, P.² Jänes, P.³ Thylén, L.⁴ Andersson, T.G.⁵

31
- 79551654967
- 0021-8979 10.1063/1.3533975
- S. Sakr, E. Warde, M. Tchernycheva, and F. H. Julien, J. Appl. Phys. 0021-8979 10.1063/1.3533975 109, 023717 (2011).
- (2011) J. Appl. Phys. , vol.109 , pp. 023717
- Sakr, S.¹ Warde, E.² Tchernycheva, M.³ Julien, F.H.⁴

32
- 0001590229
- 0021-8979 10.1063/1.369664
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, J. Appl. Phys. 0021-8979 10.1063/1.369664 85, 3222 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittmer, L.¹⁰

33
- 85032069152
- RMPHAT 0034-6861 10.1103/RevModPhys.54.437
- T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.54.437 54, 437 (1982).
- (1982) Rev. Mod. Phys. , vol.54 , pp. 437
- Ando, T.¹ Fowler, A.B.² Stern, F.³

34
- 37649013637
- PRBMDO 1098-0121 10.1103/PhysRevB.76.235325
- A. A. Klochikhin, V. Y. Davydov, I. Y. Strashkova, and S. Gwo, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.76.235325 76, 235325 (2007).
- (2007) Phys. Rev. B , vol.76 , pp. 235325
- Klochikhin, A.A.¹ Davydov, V.Y.² Strashkova, I.Y.³ Gwo, S.⁴

35
- 6244304433
- APPLAB 0003-6951 10.1063/1.1654509
- R. Tsu and L. Esaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1654509 22, 562 (1973).
- (1973) Appl. Phys. Lett. , vol.22 , pp. 562
- Tsu, R.¹ Esaki, L.²

36
- 24244446233
- JAPIAU 0021-8979 10.1063/1.338082
- Y. Ando and T. Itoh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.338082 61, 1497 (1987).
- (1987) J. Appl. Phys. , vol.61 , pp. 1497
- Ando, Y.¹ Itoh, T.²

37
- 0000977283
- APPLAB 0003-6951 10.1063/1.98097
- M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.98097 50, 612 (1987).
- (1987) Appl. Phys. Lett. , vol.50 , pp. 612
- Cahay, M.¹ McLennan, M.² Datta, S.³ Lundstrom, M.S.⁴

38
- 0003659819
- Academic Press, New York
- E. R. Brown, Hot Carriers in Semiconductor Nanostructures (Academic Press, New York, 1992), p. 469.
- (1992) Hot Carriers in Semiconductor Nanostructures , pp. 469
- Brown, E.R.¹

39
- 0035881115
- PRBMDO 1098-0121 10.1103/PhysRevB.64.085207
- F. Bernardini and V. Fiorentini, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.64.085207 64, 085207 (2001).
- (2001) Phys. Rev. B , vol.64 , pp. 085207
- Bernardini, F.¹ Fiorentini, V.²

40
- 84872315947
- I. Vurgaftman and J. R. Meyer, Nitride Semiconductor Devices: Principles and Simulation (2007), pp. 13-48.
- (2007) Nitride Semiconductor Devices: Principles and Simulation , pp. 13-48
- Vurgaftman, I.¹ Meyer, J.R.²

41
- 0025385233
- SSTEET 0268-1242 10.1088/0268-1242/5/2/006
- M. Rahman and J. H. Davies, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/5/2/006 5, 168 (1990).
- (1990) Semicond. Sci. Technol. , vol.5 , pp. 168
- Rahman, M.¹ Davies, J.H.²

42
- 4243634103
- PRPLCM 0370-1573 10.1016/S0370-1573(01)00029-1
- A. Wacker, Phys. Rep. PRPLCM 0370-1573 10.1016/S0370-1573(01)00029-1 357, 1 (2002).
- (2002) Phys. Rep. , vol.357 , pp. 1
- Wacker, A.¹

43
- 0000076421
- PRLTAO 0031-9007 10.1103/PhysRevLett.33.495
- L. Esaki and L. L. Chang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.33.495 33, 495 (1974).
- (1974) Phys. Rev. Lett. , vol.33 , pp. 495
- Esaki, L.¹ Chang, L.L.²

44
- 77954041519
- APPLAB 0003-6951 10.1063/1.3456561
- T. Lim, R. Aidam, L. Kirste, P. Waltereit, R. Quay, S. Müller, and O. Ambacher, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3456561 96, 252108 (2010).
- (2010) Appl. Phys. Lett. , vol.96 , pp. 252108
- Lim, T.¹ Aidam, R.² Kirste, L.³ Waltereit, P.⁴ Quay, R.⁵ Müller, S.⁶ Ambacher, O.⁷

45
- 33747119032
- High electron mobility lattice-matched AllnN/GaN field-effect transistor heterostructures
- DOI 10.1063/1.2335390
- M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2335390 89, 062106 (2006). (Pubitemid 44222934)
- (2006) Applied Physics Letters , vol.89 , Issue.6 , pp. 062106
- Gonschorek, M.¹ Carlin, J.-F.² Feltin, E.³ Py, M.A.⁴ Grandjean, N.⁵

46
- 79960092874
- PSSABA 0031-8965 10.1002/pssa.201001189
- D. Jena, J. Simon, A. K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.201001189 208, 1511 (2011).
- (2011) Phys. Status Solidi A , vol.208 , pp. 1511
- Jena, D.¹ Simon, J.² Wang, A.K.³ Cao, Y.⁴ Goodman, K.⁵ Verma, J.⁶ Ganguly, S.⁷ Li, G.⁸ Karda, K.⁹ Protasenko, V.¹⁰

47
- 0001642275
- RMPHAT 0034-6861 10.1103/RevModPhys.64.755
- P. Van Mieghem, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.64. 755 64, 755 (1992).
- (1992) Rev. Mod. Phys. , vol.64 , pp. 755
- Van Mieghem, P.¹

48
- 56849091293
- APPLAB 0003-6951 10.1063/1.3028338
- H. Tampo, H. Shibata, K. Maejima, A. Yamada, K. Matsubara, P. Fons, S. Kashiwaya, S. Niki, Y. Chiba, T. Wakamatsu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3028338 93, 202104 (2008).
- (2008) Appl. Phys. Lett. , vol.93 , pp. 202104
- Tampo, H.¹ Shibata, H.² Maejima, K.³ Yamada, A.⁴ Matsubara, K.⁵ Fons, P.⁶ Kashiwaya, S.⁷ Niki, S.⁸ Chiba, Y.⁹ Wakamatsu, T.¹⁰

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