Near-infrared absorption in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by MBE on low-defect GaN substrates

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 881-886

  Edmunds, C ^a   Tang, L ^a   Li, D ^a   Cervantes, M ^a   Gardner, G ^a   Paskova, T ^b   Manfra, M J ^a   Malis, O ^a  

^a PURDUE UNIVERSITY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

Electromodulation; III nitride semiconductors; Intersubband absorption; Molecular beam epitaxy; Near infrared; Quantum well infrared photodetector

Indexed keywords

ABSORPTION PEAKS; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; DEVICE APPLICATION; DIRECT ABSORPTION; ELECTROMODULATION; GA-RICH CONDITIONS; GAN SUBSTRATE; HIGH RESOLUTION X RAY DIFFRACTION; III-NITRIDE SEMICONDUCTORS; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; LATTICE-MATCHED; MATERIAL CHARACTERIZATIONS; MATERIAL QUALITY; MBE GROWTH; METAL FLUXES; NEAR INFRARED; NEAR-INFRARED ABSORPTION; PEAK RESPONSIVITY; QUANTUM WELL INFRARED DETECTORS; THEORETICAL CALCULATIONS;

ATOMIC FORCE MICROSCOPY; DEFECTS; EPITAXIAL GROWTH; HETEROJUNCTIONS; INFRARED ABSORPTION; INFRARED DEVICES; INTERFACES (MATERIALS); MOLECULAR BEAMS; QUANTUM WELL INFRARED PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84862782243     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1881-9     Document Type: Article

References (19)

1. C. Gmachl, H.M. Ng, and A.Y. Cho, Appl. Phys. Lett. 77, 334 (2000).
2. C. Gmachl, H.M. Ng, and A.Y. Cho, Appl. Phys. Lett. 79, 1590 (2001).
3. C. Gmachl and H.M. Ng, Electron. Lett. 39, 567 (2003).
4. M. Tchernycheva, L. Nevou, L. Vivien, F.H. Julien, P.K. Kandaswamy, E. Monroy, and A. Vardi, Phys. Status Solidi B 247, 1622 (2010).
5. O. Malis, C. Edmunds, M.J. Manfra, and D.L. Sivco, Appl. Phys. Lett. 94, 161111 (2009).
6. O. Malis, C. Edmunds, D. Li, and M.J. Manfra, 18th Biennial University/Government/Industry Micro-Nano Symposium "Intersubband transitions in lattice-matched AlInN/GaN Heterostructures" (2010).
7. G. Sun, J. Lumin. 119-120, 528 (2006).
8. H. Machhadani, Y. Kotsar, S. Sakr, M. Tchernycheva, R. Colombelli, J.Mangeney, E. Bellet-Amalric, E. Sarigiannidou, E.Monroy, andF.H. Julien, Appl.Phys. Lett. 97, 191101 (2010).
9. E. Bellotti, K. Driscoll, T.D. Moustakas, and R. Paiella, Appl. Phys. Lett. 92, 101112 (2008).
10. E. Bellotti, K. Driscoll, T.D. Moustakas, and R. Paiella, J. Appl. Phys. 105, 113103 (2009).
11. R.J. Molnar, W. Götz, L.T. Romano, and N.M. Johnson, J. Cryst. Growth 178, 147 (1997).
12. T. Paskova, D.A. Hanser, and K.R. Evans, Proc. IEEE 89, 1324 (2010).
13. S. Schmult, T. Siegrist, A.M. Sergent, M.J. Manfra, and R.J. Molnar, Appl. Phys. Lett. 90, 021922 (2007).
14. S. Nicolay, J.-F. Carlin, E. Feltin, R. Butté, M. Mosca, N. Grandjean, M. Ilegems, M. Tchernycheva, L. Nevou, and F.H. Julien, Appl. Phys. Lett. 87, 111106 (2005).
15. G. Snider, D Poisson Program. University of Notre Dame. http://www.nd.edu/-demand.
16. J. Wu, J. Appl. Phys. 106, 011101 (2009).
17. P.G. Moses, M. Miao, Q. Yan, and C.G. Van de Walle, J. Chem. Phys. 134, 084703 (2011).
18. E. Baumann, F.R. Giorgetta, D. Hofstetter, S. Leconte, F. Guillot, E. Bellet-Amalric, and E. Monroy, Appl. Phys. Lett. 89, 101 (2006).
19. D. Hofstetter, Sven-Silvius Schad, H. Wu, W.J. Schaff, and L.F. Eastma, Appl. Phys. Lett. 82, 572 (2003).