Transient atomic behavior and surface kinetics of GaN

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Moseley, Michael ^a   Billingsley, Daniel ^a   Henderson, Walter ^a   Trybus, Elaissa ^a   Doolittle, W Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYER; BI-LAYER; DEPTH MODELS; GA FLUX; GROWTH CONDITIONS; IN-SITU GROWTH; INDIRECT METHODS; KINETIC EVOLUTION; METAL ATOMS; NOVEL METHODS; SURFACE KINETICS; TRANSIENT BEHAVIOR;

ATOMS; CRYSTAL GROWTH; DESORPTION; ELECTRON DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM;

GROWTH KINETICS;

EID: 67650735417     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148275     Document Type: Article

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