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Volumn 97, Issue 19, 2010, Pages

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

(4) Koblmuller G a,c Reurings, F b Tuomisto, F b Speck, J S a

a University of California (United States)

b AALTO UNIVERSITY (Finland)

c WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-OVER; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; FLUX RATIO; GAN FILM; HIGH TEMPERATURE; HIGH-TEMPERATURE GROWTH; HOMOEPITAXIAL; LOW TEMPERATURE GROWTH; OXYGEN INCORPORATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; THERMAL DECOMPOSITIONS; VACANCY CONCENTRATION;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OXYGEN; POINT DEFECTS; PYROLYSIS; SURFACE DEFECTS; TRANSPORT PROPERTIES; VACANCIES;

MOLECULAR BEAMS;

EID: 78249266004 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514236 Document Type: Article

Times cited : (44)

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