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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer

(8) Hofstetter, Daniel a Baumann, Esther a Giorgetta, Fabrizio R a Théron, Ricardo a Guillot, Fabien b Monroy, Eva b Golka, Sebastian c Strasser, Gottfried c

a UNIVERSITY OF NEUCHÂTEL (Switzerland)

b CEA GRENOBLE (France)

c VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; ACTIVE AREA; ACTIVE REGIONS; ALGAN; ALN; ALN BARRIERS; CAP LAYERS; EPITAXIAL STRUCTURE; LONG WAVELENGTH; MONOLITHICALLY INTEGRATED; PHOTOCONDUCTIVE ULTRAVIOLET DETECTORS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM WELL; ROOM TEMPERATURE; SAPPHIRE TEMPLATES; STRAIN-COMPENSATED; WAVELENGTH RANGES;

BUFFER LAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INFRARED DETECTORS; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SUPERLATTICES; THICK FILM DEVICES; ULTRAVIOLET DETECTORS;

DETECTORS;

EID: 79251630547 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200880761 Document Type: Article

Times cited : (2)

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