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Volumn 81, Issue 9, 2002, Pages 1729-1731

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN BARRIERS; CONTACT LAYERS; DOUBLE BARRIERS; MESA-DIODES; NEGATIVE DIFFERENTIAL RESISTANCES; NITROGEN SOURCES; PEAK CURRENTS; PEAK TO VALLEY CURRENT RATIO; QUANTUM WELL; RF PLASMA; ROOM TEMPERATURE;

EID: 79956003733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1501157     Document Type: Article
Times cited : (131)

References (17)
  • 1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.