Transparency of GaN substrates in the mid-infrared spectral range

Crystal Research and Technology

Volumn 47, Issue 3, 2012, Pages 347-350

  Welna, M ^a   Kudrawiec, R ^a   Motyka, M ^a   Kucharski, R ^b   Zajac M ^b   Rudzinski M ^c   Misiewicz, J ^a   Doradzinski R ^b   Dwilinski R ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b AMMONO SA   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

GaN; mid infrared; optical phonons; transmission

Indexed keywords

AMMONOTHERMAL METHOD; CUT-OFF; ELECTRON CONCENTRATION; ELECTRON PHONON COUPLINGS; FOURIER SPECTROSCOPY; FREE CARRIER CONCENTRATION; GAN; GAN CRYSTALS; GAN SUBSTRATE; GAN TEMPLATE; INFRARED SPECTRAL REGIONS; INFRARED TRANSPARENCY; MID-INFRARED SPECTRAL RANGE; MIDINFRARED; OPTICAL PHONONS; SECOND HARMONICS; SHORTER WAVELENGTH; SIC SUBSTRATES; SPECTRAL RANGE; VAPOUR PHASE EPITAXY;

CRYSTAL GROWTH; LIGHT TRANSMISSION; PHONONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSMISSIONS; TRANSPARENCY;

GALLIUM NITRIDE;

EID: 84857712394     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201100443     Document Type: Conference Paper

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