Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Bayram, C ^a   Vashaei, Z ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALGAN/GAN; ALUMINUM CONTENTS; DOUBLE BARRIERS; ELECTRICAL CHARACTERIZATION; GAN SUBSTRATE; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; NON-POLAR; OUTPUT POWER; PEAK-TO-VALLEY RATIOS; POLARIZATION FIELD; REPRODUCIBILITIES; ROOM TEMPERATURE;

ALUMINUM; ALUMINUM COATINGS; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEGATIVE RESISTANCE; ORGANIC CHEMICALS; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES;

RESONANT TUNNELING;

EID: 78649307670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515418     Document Type: Article

References (21)

1. L. L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 0003-6951 24, 593 (1974). 10.1063/1.1655067
2. L. Esaki, Phys. Rev. 0031-899X 109, 603 (1958). 10.1103/PhysRev.109.603
3. T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck, Appl. Phys. Lett. 0003-6951 43, 588 (1983). 10.1063/1.94434
4. M. Asada, S. Suzuki, and N. Kishimoto, Jpn. J. Appl. Phys. 0021-4922 47, 4375 (2008). 10.1143/JJAP.47.4375
5. G. Martin, S. Strite, A. Botchkarev, A. Agarwal, A. Rockett, H. Morkoc, W. R. L. Lambrecht, and B. Segall, Appl. Phys. Lett. 0003-6951 65, 610 (1994). 10.1063/1.112247
6. V. D. Jovanović, D. Indjin, Z. Ikonić, and P. Harrison, Appl. Phys. Lett. 0003-6951 84, 2995 (2004). 10.1063/1.1707219
7. A. Kikuchi, R. Bannai, K. Kishino, C. M. Lee, and J. I. Chyi, Appl. Phys. Lett. 0003-6951 81, 1729 (2002). 10.1063/1.1501157
8. C. T. Foxon, S. V. Novikov, A. E. Belyaev, L. X. Zhao, O. Makarovsky, D. J. Walker, L. Eaves, R. I. Dykeman, S. V. Danylyuk, S. A. Vitusevich, M. J. Kappers, J. S. Barnard, and C. J. Humphreys, Phys. Status Solidi C 1610-1634 0, 2389 (2003). 10.1002/pssc.200303376
9. M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, and M. Eickhoff, Phys. Status Solidi C 1610-1634 1, 2210 (2004). 10.1002/pssc.200404771
10. M. V. Petrychuk, A. E. Belyaev, A. M. Kurakin, S. V. Danylyuk, N. Klein, and S. A. Vitusevich, Appl. Phys. Lett. 0003-6951 91, 222112 (2007). 10.1063/1.2817752
11. S. Leconte, S. Golka, G. Pozzovivo, G. Strasser, T. Remmele, M. Albrecht, and E. Monroy, Phys. Status Solidi C 1610-1634 5, 431 (2008). 10.1002/pssc.200777463
12. C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. 0003-6951 96, 042103 (2010). 10.1063/1.3294633
13. Z. Vashaei, C. Bayram, and M. Razeghi, J. Appl. Phys. 0021-8979 107, 083505 (2010). 10.1063/1.3372763
14. S. Golka, C. Pflügl, W. Schrenk, G. Strasser, C. Skierbiszewski, M. Siekacz, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 0003-6951 88, 172106 (2006). 10.1063/1.2199445
15. Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi, Appl. Phys. Lett. 0003-6951 96, 201908 (2010). 10.1063/1.3432408
16. Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi, Appl. Phys. Lett. 0003-6951 97, 121918 (2010). 10.1063/1.3493185
17. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 0021-8979 81, 6332 (1997). 10.1063/1.364368
18. M. Razeghi, A. Tardella, R. A. Davies, A. P. Long, M. J. Kelly, E. Britton, C. Boothroyd, and W. M. Stobbs, Electron. Lett. 0013-5194 23, 116 (1987). 10.1049/el:19870082
19. C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. 0003-6951 97, 092104 (2010). 10.1063/1.3484280
20. F. Sacconi, A. D. I. Carlo, and P. Lugli, Phys. Status Solidi A 0031-8965 190, 295 (2002). 10.1002/1521-396X(200203)190:1<295::AID-PSSA295>3.0. CO;2-A
21. S. C. Kim and A. Brandli, IRE Trans. Circuit Theory 0096-2007 8, 416 (1961).