Sub-picosecond all-optical gate utilizing aN intersubband transition

Optics Express

Volumn 13, Issue 10, 2005, Pages 3835-3840

  Iizuka, Norio ^a   Kaneko, Kei ^a   Suzuki, Nobuo ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS;

ALL-OPTICAL GATE-SWITCH OPERATION; INPUT PULSE ENERGY; INTERSUBBAND TRANSITION; MAGNETIC POLARIZATION;

OPTICAL SWITCHES;

EID: 21244477134     PISSN: 10944087     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OPEX.13.003835     Document Type: Article

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