Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 107-112

  Leconte, S ^a   Guillot, F ^a   Sarigiannidou, E ^a   Monroy, E ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTING ALUMINUM COMPOUNDS;

CAPACITIVE MEASUREMENTS; DISLOCATION DENSITY; SINGLE-BARRIER STRUCTURES;

CHARGE DISTRIBUTION;

EID: 34247278251     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/018     Document Type: Article

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