Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Sodabanlu, Hassanet ^a   Yang, Jung Seung ^b   Tanemura, Takuo ^b   Sugiyama, Masakazu ^b   Shimogaki, Yukihiro ^b   Nakano, Yoshiaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION WAVELENGTHS; INTER-SUBBAND; INTERSUBBAND ABSORPTION; METAL-ORGANIC VAPOR PHASE EPITAXY; PULSE ENERGIES; REPETITION RATE; SELF-SATURATION; SHORT-PULSE LASERS; TEMPORAL WIDTH;

ABSORPTION; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; PULSE REPETITION RATE; QUANTUM WELL LASERS; VAPORS; WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80054996633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3650929     Document Type: Article

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