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Volumn 43, Issue 3, 2001, Pages 549-555

Resonant electron tunneling in GaN/Ga1 - xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

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Indexed keywords


EID: 0035530014     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1356136     Document Type: Article
Times cited : (24)

References (40)
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    • (1994) Properties of Group III Nitrides
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    • S. N. Grinyaev and V. N. Chernyshov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 26 (12), 2057 (1992) [Sov. Phys. Semicond. 26, 1157 (1992)].
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    • É. I. Rashba, Fiz. Tverd. Tela (Leningrad) 1 (3), 407 (1959) [Sov. Phys. Semicond. 1, 368 (1959)].
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.