Nanowire resonant tunneling diodes

Applied Physics Letters

Volumn 81, Issue 23, 2002, Pages 4458-4460

  Bjork M T ^a   Ohlsson, B J ^a   Thelander, C ^a   Persson, A I ^a   Deppert, K ^a   Wallenberg, L R ^a   Samuelson, Lars ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; PHOTONS; RESONANT TUNNELING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM NANOELECTRONICS;

SEMICONDUCTOR DIODES;

EID: 0037011472     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527995     Document Type: Article

References (26)

1. Zh.I. Alferov, H. Kroemer www.nobel.se/physics/laureates/2000/.
2. K. von Klitzing, www.nobel.se/physics/laureates/1985/.
3. R.B. Laughlin, H.L. Stormer, D.C. Tsui, www.nobel.se/physics/laureates/1998/.
4. R. Dingle, W. Wiegmann, and C.H. Henry, Phys. Rev. Lett. 33, 827 (1974).
5. L.L. Chang, L. Esaki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974).
6. R.D. Dupuis, P.D. Dapkus, Jr., N. Holonyak, E.A. Rezek, and R. Chin, Appl. Phys. Lett. 32, 295 (1978).
7. H. Sakaki, Jpn. J. Appl. Phys., Part 2 19, L735 (1980).
8. M.A. Reed, J.N. Randall, R.J. Aggarwal, R.J. Matyi, T.M. Moore, and A.E. Wetsel, Phys. Rev. Lett. 60, 535 (1988).
9. S. Tarucha, Y. Hiarayama, T. Saku, and T. Kimura, Phys. Rev. B 41, 5459 (1990).
10. J. Wang, P.H. Beton, N. Mori, L. Eaves, H.Y. Buhmann, L. Monsouri, P.C. Main, T.J. Foster, and M. Henini, Phys. Rev. Lett. 73, 1146 (1994).
11. I.E. Itskevich, T. Ihn, A. Thornton, M. Henini, T.J. Foster, P. Moriarty, A. Nogaret, P. Beton, L. Eaves, and P.C. Main, Phys. Rev. B 54, 16401 (1996).
12. M. Narihiro, G. Yusa, Y. Nakamura, T. Noda, and H. Sakaki, Appl. Phys. Lett. 70, 105 (1996).
13. M. Borgstrom, T. Bryllert, T. Sass, B. Gustafson, L.-E. Wernersson, W. Seifert, and L. Samuelson, Appl. Phys. Lett. 78, 3232 (2001).
14. Y. Cui and C.M. Lieber, Science 291, 851 (2001).
15. M.H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
16. Y. Huang, X. Duan, Y. Cui, L.J. Lauhon, K.-H. Kim, and C.M. Lieber, Science 294, 1313 (2001).
17. M.T. Björk, B.J. Ohlsson, T. Sass, A.I. Persson, C. Thelander, M.H. Magnusson, K. Deppert, L.R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 80, 1058 (2002).
18. M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, and C.M. Lieber, Nature (London) 415, 617 (2002).
19. Y. Wu, R. Fan, and P. Yang, Nano Lett. 2, 83 (2002).
20. R.F. Service, Science 295, 946 (2002).
21. R.S Wagner, Whisker Technology (Wiley, New York, 1970), pp. 47-119.
22. B.J. Ohlsson, M.T. Björk, M.H. Magnusson, K. Deppert, L.R. Wallenberg, and L. Samuelson, Appl. Phys. Lett. 79, 3335 (2001).
23. M.H. Magnusson, K. Deppert, J.-O. Malm, J.-O. Bovin, and L. Samuelson, J. Nanopart. Res. 1, 243 (1999).
24. M.T. Björk, B.J. Ohlsson, T. Sass, A.I. Persson, C. Thelander, M.H. Magnusson, K. Deppert, L.R. Wallenberg, and L. Samuelson, Nano Lett. 2, 87 (2002).
25. The energy levels of the dot are calculated from a square potential 0.6 eV high and 15 nm wide. The calculated ground state energy level fits the resonance peak if the voltage to energy conversion factor is roughly 2.
26. No step like behavior is observed on the rising slope of the peak [Fig. 3(c)] as would be expected if more than one subband would be populated. Such features have been observed in other devices. In addition the Fermi level should be given by the peak width corrected by a voltage-to-energy factor, being 2 for the ideal case. The measurement yields a very sharp resonance, which is in agreement with a low Fermi energy position.