Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 8 PART A, 1997, Pages

  Suzuki, Nobuo ^a   Iizuka, Norio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; Intersubband transition; LO phonon; Nonlinear susceptibility; Quantum well; Relaxation time

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; NONLINEAR OPTICS; OPTICAL PROPERTIES; OPTICAL SWITCHES; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAFAST PHENOMENA;

GALLIUM NITRIDE; INTERSUBBAND TRANSITIONS; THIRD ORDER NONLINEAR SUSCEPTIBILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031199531     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1006     Document Type: Article

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