Si-doped GaN/AIN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1754-1758

  Guillot, F ^a   Tchernycheva, M ^b   Nevou, L ^b   Doyennette, L ^b   Monroy, E ^a   Julien, F H ^b   Dang, Le Si ^c   Remmele, T ^d   Albrecht, M ^d   Shibata, T ^e   Tanaka, M ^e  

^a CEA GRENOBLE   (France)

^b UNIV PARIS SUD   (France)

^c LIPHY   (France)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^e NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; ELECTRONIC LEVEL; INTERSUBBAND ABSORPTION; TELECOMMUNICATION WAVELENGTHS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; TELECOMMUNICATION;

SEMICONDUCTOR SUPERLATTICES;

EID: 33745031344     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565129     Document Type: Article

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