Intersubband photonic devices by group-III nitrides

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6782, Issue , 2007, Pages

  Holmstrom P ^a,b   Liu, X Y ^c   Uchida, H ^b   Aggerstam, T ^a   Kikuchi, A ^b   Kishino, K ^b   Lourdudoss, S ^a   Andersson, T G ^c   Thylen L ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b SOPHIA UNIVERSITY   (Japan)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

All optical switch; AlN; Electroabsorption modulator; GaN; GaN template; Intersubband transition; Molecular beam epitaxy; Nanocolumn; Quantum cascade laser; Quantum well infrared photodetector (QWIP)

Indexed keywords

ELECTROABSORPTION MODULATORS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL SWITCHES; PHOTODETECTORS; QUANTUM CASCADE LASERS; SEMICONDUCTOR QUANTUM WELLS;

ALL OPTICAL SWITCHES; INTERSUBBAND TRANSITION; NANOCOLUMN; QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

PHOTONIC DEVICES;

EID: 42549136075     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.754372     Document Type: Conference Paper

References (47)

1. X. Y. Liu, P. Holmström, P. Jänes, L. Thylén and T.G. Andersson, "Intersubband absorption at 1.5-3.5 μm in GaN/AlN multiple quantum wells grown by molecular beam epitaxy on sapphire", Phys. Stat. Sol. B 244, 2892-2905 (2007).
2. J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Kishino, "Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μrn in GaN/AlN multiple-quantum wells", Appl. Phys. Lett. 84, 1102-1104 (2004).
3. P. Holmström, "Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells", IEEE J. Quantum Electron. 42, 810-819 (2006).
4. D. Indjin, Z. Ikonic, V. D. Jovanovic, P. Harrison and R. W. Kelsall, "Mechanisms of carrier transport and temperature performance evaluation in terahertz quantum cascade lasers", Semicond. Sci. Tech. 19, S104-S106 (2004).
5. 0.85N quantum cascade laser", Superlatt Microstruct 37, 107-113 (2005).
6. J. W. P. Hsu, M. J. Manfra, D. V. Lang, S. Richter, S. N. G. Chu, A. M. Sergent, R. N. Kleiman, and L. N. Pfeiffer, "Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes", Appl. Phys. Lett. 78, 1685-87 (2001).
7. M. Mosca, S. Nicolay, E. Feltin, J.-F. Carlin, R. Butté, M. Ilegems, N. Grandjean, M. Tchernycheva, L. Nevou, and F. H. Julien, "Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions", Phys. Stat. Sol. A 204, No. 4, 1100-1104 (2007).
8. Y. Yu, R. Lewén, S. Irmscher, U.Westergren, L. Thylén, U. Eriksson,W. S. Lee, "80-Gb/s ETDM optical transmitter with a traveling-wave electroabsorption modulator", Optical Fiber Communications Conference (OFC2005), vol. 3, p. 85-87, 2005.
9. P. Holmström, "High-speed mid-IR modulator using Stark shift in step quantum wells", IEEE J. Quantum Electron. 37, 1273-1282 (2001).
10. P. Jänes and P. Holmström, "High-speed optical modulator based on intersubband transitions in InGaAs/InAlAs/AlAsSb coupled quantum wells", Proceedings of the 15th International Conference on Indium Phosphide and Related Materials (IPRM 2003),p. 308-311, Santa Barbara, USA, 2003.
11. P. Holmström, "Intersubband Electroabsorption Modulator", p. 253-277, in Nitride Semiconductor Devices: Principles and Simulation, J. Piprek ed., Wiley VCH, Berlin, 2007.
12. P. Holmström, P. Jänes, U. Ekenberg, and L. Thylén, "Efficient electroabsorption for mid-infrared wavelengths using intersubband transitions", Int. Conf. on Nanoscience and Technology (ICN+T 2007), Proc. in J. Physics:Conf. Ser., Stockholm, Sweden, 2007.
13. P. Holmström, P. Jänes, U. Ekenberg, and L. Thylén, "Infrared modulator at 6 μm using intersubband transitions in step quantum wells grown by MOVPE", Int. Conf. on Modulated Semiconductor Structures (MSS-13), Genova, Italy, 2007.
14. P. Jänes, P. Holmström, and U. Ekenberg, "A high-speed intersubband modulator based on quantum interference in double quantum wells", IEEE J. Quantum Electron. 38, 178-184 (2002).
15. 1-xN as a function of Al mole fraction up to 0.5", Mater. Sci. Eng. B91-92, 285-289 (2002).
16. K. Kishino and A. Kikuchi, "Improved molecular beam epitaxy for fabricating AlGaN/GaN heterojunction devices", Phys. Stat. Sol A190, 23-31 (2002).
17. F. Koyama and K. Iga, "Frequency chirping in external modulators", J. Lightwave Technol. 6, 87-93, 1988.
18. Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, T. Aoyagi, and Y. Mitsui", "Small-chirp 40-Gbps electroabsorption modulator with novel tensile-strained asymmetric quantum-well absorption layer", IEEE J. Quantum Electron. 39, 813-819 (2003).
19. X.Y. Liu, P. Jänes, P. Holmström, T. Aggerstam, S. Lourdudoss, L. Thylén, and T.G. Andersson, "Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy", J Cryst Growth 300, 79-82 (2007).
20. T. Aggerstam, T. G. Andersson, P. Holmström, P. Jänes, X. Y. Liu, S. Lourdudoss, and L. Thylén, "GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 urn intersubband absorption", Proc. Int. Conf. on Quantum Sensing and Nanophotonic Devices IV, SPIE 6479, p. 64791E-1-12, 2007.
21. B. F. Levine, K. K. Choi, C. G. Bethea, J. Walker, and R. J. Malik, "New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices", Appl. Phys. Lett. 50, 1092-1094 (1987).
22. D. Hofstetter, S.-S. Schad, H. Wu, W. J. Schaff, and L. F. Eastman, "GaN/AlN-based quantum-well infrared photodetector for 1.55 μm", Appl. Phys. Lett 83, 572 (2003).
23. H. Uchida, S. Matsui, P. Holmström, A. Kikuchi and K. Kishino, "Room-temperature operation of 1.55 μm wavelength-range GaN/AlN quantum well intersubband photodetectors", IEICE Electron. Express 2, 566-571 (2005).
24. A. Vardi, N. Akopian, G. Bahir, L. Doyennette, M. Tchernycheva, L. Nevou, F. H. Julien, F. Guillot and E. Monroy, "Room temperature demonstration of GaN/AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength", Appl. Phys. Lett. 88, 143101 (2006).
25. F. Guillot, M. Tchernycheva, L. Nevou, L. Doyennette, E. Monroy, F. H. Julien, Le Si Dang, T. Remmele, M. Albrecht, T. Shibata, and M. Tanaka, "Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths", Phys. Stat. Sol. A203, 1754-1758 (2006).
26. E. Monroy, F. Guillot, S. Leconte, E. Bellet-Amalric, E. Baumann, F. Giorgetta, D. Hofstetter, L. Nevou, M. Tchernycheva, L. Doyennette, F.H. Julien, T. Remmele, M. Albrecht, "MBE growth of nitride-based photovoltaic intersubband detectors", Superlatt. Microstruct 40, 418-425 (2006).
27. F.R. Giorgetta, E. Baumann, F. Guillot, E. Monroy, and D. Hofstetter, "High frequency (f=2.37 GHz) room temperature operation of 1.55 μm AlN/GaN-based intersubband detector", El. Lett. 43, 185-186 (2007).
28. 3(0001) by RF-radical source molecular beam epitaxy", Jpn. J. Appl. Phys. 36, L459-L462 (1997).
29. N. Suzuki, N. Iizuka, and K. Kaneko, "Simulation of ultrafast GaN/AlN intersubband optical switches", IEICE Trans. Electron. E88, 342-348 (2005).
30. N. Iizuka, K. Kaneko and N. Suzuki, "Polarization dependent loss in III-nitride optical waveguides for telecommunication devices", J. Appl. Phys. 99, 093107-1-5 (2006).
31. N. Li, I. Waki, C. Kumtornkittikul, J.-H. Liang, M. Sugiyama, Y. Shimogaki and Y. Nakano, "Fabrication of AlGaN-based waveguides by inductively coupled plasma etching", Jpn. J. Appl. Phys. 43, L1340-L1342 (2004).
32. G. Sun, J. B. Khurgin, and R. A. Soref, "Nonlinear all-optical GaNAlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm", Appl. Phys. Lett. 87, 201108 (2005).
33. Y. Li and R. Paiella, "Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells", Semicond. Sci. Tech. 21, 1105-1110 (2006).
34. S. Matsui, Y. Ishii, T. Morita, P. Holmström, H. Sekiguchi, A. Kikuchi and K. Kishino, "All optical modulation using intersubband transitions at 1.55 μm in GaN/AlN multiple quantum well", Phys. Stat. Sol. C., vol. 2, 2748-52 (2005).
35. C. Y. L. Cheung and K. A. Shore, "Self-consistent analysis of the direct-current modulation response of unipolar semiconductor lasers", J. Mod. Optics 45, 1219-1229 (1998).
36. F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M.Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, "Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission", IEEE J. Quantum Electron. 38, 511-532 (2002).
37. J. Kim, M. Lerttamrab, S. L. Chuang, C. Gmachl, D. L. Sivco, F. Capasso, and A. Y. Cho, "Gain and linewidth enhancement factor of type-I quantum-cascade lasers", IEEE J. Quantum Electron. 40, 1663-1671 (2004).
38. R. Soref, "The Past, Present, and Future of Silicon Photonics", IEEE J. Quantum Electron. 12, 1678-1687 (2006).
39. L. Thylén, U. Westergren, P. Holmström, R. Schatz, and P. Jänes, "Recent developments in high-speed optical modulators", in Optical Fiber Telecommunications V, I. P. Kaminow, T. Li, A. E. Willner eds., Academic Press, London, 2008.
40. L. Nevou, M. Tchernycheva, F. H. Julien, F. Guillot and E. Monroy, "Short wavelength 2.13 μm intersubband luminescence from GaN/AlN quantum wells at room temperature", Appl. Phys. Lett. 90, 121106 (2007).
41. A. Ishida, K. Matsue, Y. Inoue, H. Fujiyasu, H.-J. Ko, A. Setiawan, J.-J. Kim., H. Makino and T. Yao, "Design and preparation of AlN/GaN quantum wells for quantum cascade laser applications", Jpn. J. Appl. Phys. 44, 5918-5922 (2005).
42. G.S. Huang, T.C. Lu, H.H. Yao, H.C. Kuo, S.C. Wang, G. Sun, C.-W. Lin, L. Chang, R. A. Soref, "GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition", J. Cryst. Growth 298, 687-690 (2007).
43. n superlattices in the wavelength range from 1.08 to 1.61 μm", Appl. Phys. Lett. 81, 1234-1236 (2002)
44. G. Feuillet, B. Daudin, F. Widmann, J. L. Rouvière and M. Arléry, "Plastic versus elastic misfit relaxation in III-nitrides grown by molecular beam epitaxy", J. Cryst. Growth, 189/190, 142-146 (1998).
45. I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella, and T.D. Moustakas, " Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption", J. Cryst. Growth 278, 387-392 (2005).
46. G. Cywinski, C. Skierbiszewski, A. Fedunieiwcz-Zmuda, M. Siekacz, L. Nevou, L. Doyennette, M. Tchernycheva, F.H. Julien, P. Prystawko, M. Krysko, S. Grzanka, I. Gregory, A. Presz, J.Z. Domagala, J. Smalc, M. Albrecht, T. Remele and S. Porowski, "Growth of thin AlInN/GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths", J. Vac. Sci. Technol. B 24 1505-1509 (2006).
47. A. Kikuchi, M. Kawai, M. Tada and K. Kishino, "InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate", Jpn. J. Appl. Phys. 43, L1524-L1526 (2004).