Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells

Electronics Letters

Volumn 39, Issue 6, 2003, Pages 567-569

  Gmachl, C ^a   Ng, Hock M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ALUMINUM NITRIDE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

SPONTANEOUS POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037456936     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030381     Document Type: Article

References (7)

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3. GMACHL, C., NG, H.M., CHU, S.-N.G., and CHO, A.Y.: 'Intersubband absorption at λ ∼ 1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with super-lattice barriers', Appl. Phys. Lett., 2000, 77, pp. 3722-3724
4. BERNARDINI, F., FIORENTINI, V, and VANDERBUILT, D.: 'Spontaneous polarization and piezoelectric constants of III-V nitrides', Phys. Rev. B, 1997, 56, pp. R10024-10027
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