Performance improvement of AlNGaN-based intersubband detectors by using quantum dots

IEEE Photonics Technology Letters

Volumn 22, Issue 15, 2010, Pages 1087-1089

  Hofstetter, Daniel ^a   Di Francesco, Joab ^a   Kandaswamy, Prem K ^b   Das, Aparna ^b   Valdueza Felip, Sirona ^b   Monroy, Eva ^b  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b CEA GRENOBLE   (France)

Author keywords

Photodetectors; quantum dots (QDs); semiconductors

Indexed keywords

ELECTRON LIFETIME; EXCITED STATE LIFETIMES; HIGHER TEMPERATURES; INTER-SUBBAND; INTERSUBBAND DETECTORS; OPTICAL RECTIFICATIONS; PERFORMANCE IMPROVEMENTS; QUANTUM DOT; QUANTUM DOTS; QUANTUM DOTS (QDS); QUANTUM WELL; RESPONSIVITY;

OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77954249996     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2050057     Document Type: Article

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