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Volumn 38, Issue 4 PART 2, 1999, Pages 363-365
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Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
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Author keywords
AlN; GaN; Intersubband transition; Optical switches; Piezoelectric effect; Quantum well; Relaxation time; Spontaneous polarization
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Indexed keywords
ELECTRON TRANSITIONS;
OPTICAL SWITCHES;
PIEZOELECTRICITY;
POLARIZATION;
RELAXATION PROCESSES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
ALUMINUM GALLIUM NITRIDE;
INTERSUBBAND TRANSITION (ISBT);
SPONTANEOUS POLARIZATION;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0032631739
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.l363 Document Type: Article |
Times cited : (112)
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References (14)
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